Organic Thin-Film Transistors with Conductive Metal–Oxides as Source–Drain Electrodes

Ichikawa, Musubu; You, Long; Tatemichi, Shuhei; Koyama, Toshiki; Taniguchi, Yoshio

doi:10.1143/jjap.45.l1171

Cited by 8 publications

(5 citation statements)

References 13 publications

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“…However, the previous study used indium tin oxide as contact electrodes and we have reported in another paper that conductive metal oxides such as indium tin oxide work as useful contact electrode materials in bottom contact configuration. 29) The relatively large difference in μ e between vacuum-deposited and solution-processed (with annealing) NTCDI-C8 TFTs can be discussed. Figures 3(a) and 3(b) show the surface morphology of NTCDI-C8 thin films prepared by vacuum evaporation and spin-coating from its solution.…”

Section: Resultsmentioning

confidence: 99%

Comparative study of long alkyl chain substituted naphthalene diimide derivatives as n-type organic thin-film transistor materials

Ichikawa

Iwasaki

Ohyama

et al. 2017

Jpn. J. Appl. Phys.

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In this study, vacuum-evaporated thin films of several naphthalene tetracarboxylic acid diimide derivatives substituted at the N and N′ positions with long normal alkyl chains of varying lengths (NTCDI-Cn) were evaluated as active materials for n-type organic thin-film transistors (TFTs). The electron mobility (μe) of the TFTs increased with increasing chain length from octyl (NTCDI-C8) to pentadecyl (NTCDI-C15); those of NTCDI-C15 and C18 TFTs were of 0.262 ± 0.016 and 0.222 ± 0.016 cm2 V−1 s−1, respectively. However, the threshold voltage of the TFTs increased with increasing chain length.

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Section: Resultsmentioning

confidence: 99%

Comparative study of long alkyl chain substituted naphthalene diimide derivatives as n-type organic thin-film transistor materials

Ichikawa

Iwasaki

Ohyama

et al. 2017

Jpn. J. Appl. Phys.

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“…[19][20][21][22][23][24][25][26] These techniques drastically modify the work function of ITO and enhance device performance in OLEDs and OPVs. As far as we know, there are several literature on OTFTs with ITO S/D electrodes, [27][28] however, there are no modification information reports. A simple and effective method of ITO modification in OTFTs is needed to reduce the energy barrier, whether Cl-ITO could be promising S/D electrodes also needs to be verified, and furthermore, the inherent mechanism of Cl-ITO remains a challenge to explore.…”

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confidence: 99%

Modification of Indium Tin Oxide Surface with HCl for Source/Drain Electrodes in Organic Thin Film Transistors

Rong

Han

Tian

et al. 2022

Adv Materials Technologies

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In recent years, exciting advances have been achieved in pursuing organic thin film transistors (OTFTs) with high mobility. Whereas, the economical infeasibility of Au source/drain (S/D) electrodes that are widely used in OTFTs hinders the further development of OTFTs in industry. In this study, the modified indium tin oxide (ITO) as S/D electrodes is adopted. The ITO is modified by HCl aqueous solutions, its surface work function is improved from 4.8 to 5.5 eV. By first‐principle calculations and experiments, the charge analysis shows that the Cl atom traps 0.475 electrons, which indicates that In–Cl dipoles are responsible for the increase of the surface work function, besides the HCl modification leads to In+‐Cl− bonds instead of In3+‐Cl− bonds on the ITO surface compared with the reported InCl3 modification. More encouragingly, In+‐Cl− surface is found to have higher Cl density, higher work function and higher conductivity. TIPS‐pentacene, with suitable HOMO level of 5.2 eV, is adopted as organic semiconductor, and the bar‐coating process is optimized to realize oriented films. OTFTs with maximum field‐effect mobility of 0.77 cm2 V−1 s−1 are achieved. The ITO electrodes modified by HCl can be promising in the industry.

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“…configurations from the viewpoint of contact resistance. 14 Prior to preparing P3HT layers on the substrates, the substrate surfaces were modified by exposing the substrates to O 2 plasma for 5 min and then treating them with a toluene solution containing 0.1 wt. % octyltrichlorosilane in a N 2 -filled glove box for 30 min at 70 C. The treated substrates were rinsed with absolute toluene and 2-propanol sequentially and then sonicated in 2-propanol for 30 min.…”

Section: Introductionmentioning

confidence: 99%

Effects of volatile additives in solutions used to prepare polythiophene-based thin-film transistors

Ichikawa¹,

Yamamura²,

Jeon³

et al. 2011

Journal of Applied Physics

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We investigate the effects of volatile additives in solutions used to prepare thin-film transistors (TFTs) of regioregular poly(3-hexylthiophene) (P3HT). We use the additives trifluoromethylbenzene (TFMB) and methylcyclohexane (MCH) because they are poor solvents for P3HT. The additives improve the performance of the resulting TFTs when the boiling point (T b ) of the major solvent, carbon tetrachloride, is lower than that of the additive. The maximum mobility is (4.0 6 0.9) Â 10 -2 cm 2 V -1 s -1 , which is 6.1 times larger than that of TFTs prepared without TFMB or MCH added to the solution; the on/off ratio and the subthreshold slope were also improved. The relative T b of the solvent and the additive affected the film formation with the amount of TFMB or MCH remaining at the final stage of thin film deposition influencing the precipitation of P3HT aggregates.

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Organic Thin-Film Transistors with Conductive Metal–Oxides as Source–Drain Electrodes

Cited by 8 publications

References 13 publications

Comparative study of long alkyl chain substituted naphthalene diimide derivatives as n-type organic thin-film transistor materials

Comparative study of long alkyl chain substituted naphthalene diimide derivatives as n-type organic thin-film transistor materials

Modification of Indium Tin Oxide Surface with HCl for Source/Drain Electrodes in Organic Thin Film Transistors

Effects of volatile additives in solutions used to prepare polythiophene-based thin-film transistors

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