This paper describes the design of a CMOS capacitor-ratio-independent and gain-insensitive algorithmic analog-to-digital (A/D) converter. Using the fully differential switched-capacitor technique, the A/D converter is insensitive to capacitor-ratio accuracy as well as finite gain and offset voltage of operational amplifiers. The switch-induced error voltage becomes the only major error source, which is further suppressed by the fully differential structure. The proposed A/D converter is designed and fabricated by 0.8 m double-poly double-metal CMOS technology. The op-amp gain is only 60 dB and no special layout care is done for capacitor matching. Experimental results have shown that 14-b resolution at the sampling frequency of 10 kHz can be achieved in the fabricated A/D converter. Thus it can be used in the applications which require low-cost high-resolution A/D conversion.
This paper describes a 10-b high-speed COMS DAC fabricated by 0.8-pm double-poly double-metal CMOS technology. In the DAC, a new current source called the thresholdvoltage compensated current source is used in the two-stage current array to reduce the linearity error caused by inevitable current variations of the current sources. In the two-stage weighted current array, only 32 master and 32 slave unit current sources are required. Thus silicon area and stray capacitance can be reduced significantly. Experimental results show that a conversion rate of 125 MHz is achievable with differential and integral linearity errors of 0.21 LSB and 0.23 LSB, respectively. The power consumption is 150 mW for a single 5-V power supply. The ridfall time is 3 ns and the full-scale settling time to *1/2 LSB is within 8 ns. The chip area is 1.8 mm x 1.0 mm.
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