T h i s p a p e r d e s c r i b e s t h e n e w wrlte/erase operation methods in order to improve the read disturb characteristics for Flash EEPROM cells which are written by c h a n n e l hot electron injection and erased by F-N tunneling emission from the floating gate to the substrate. The new o p e r a t i o n . m e t h o d s is either applying a reverse polarity pulse after each erase pulse o r applying a series o f shorter erase pulses instead o f a l o n g single erase pulse. It is confirmed that by using the above operation methods, the leakage current can be suppressed, and then the read disturb life time after 10" cycles W/E operation is more than 10 times longer i n c o m p a r i s o n w i t h t h e c o n v e n t l o n a l method.
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