An accurate model of subbreakdown due to band-to-band tunneling and its application

Temperature and drain voltage dependence of gate-induced drain leakage

“…This value is in the range of the doping concentration distribution given by process simulation. In addition, the value of the effective doping concentration is in good agreement with the assumption that the band-to-band tunneling current is at a maximum with a doping concentration about 3-4 Â 10 18 cm À3 for a T ox about 3-10 nm [6,9]. GIDL current measurements have been performed at different temperatures and drain voltages in order to determine the dependence of A and B on these two parameters.…”

“…In some models [8,9], the band-to-band tunneling current is calculated in the whole depletion zone. In this study, we consider only the tunneling effect of carriers that are at the Si-SiO 2 interface.…”

Analysis of high-voltage metal–oxide–semiconductor transistors with gradual junction in the drift region

“…The design of the drift region, such as by varying the doping concentration or the length of drift region, in high-voltage MOS transistors has been shown to produce a serious impact on V BD and hot-carrier-induced degradation of the device. [23][24][25][26][27][28] Our previous work has shown that high-voltage n-type MOS transistors using a gradual junction structure in the drift region have improved V BD without sacrificing device drivability. 29) In this study, high-voltage n-type MOS transistors with traditional and gradual junctions in the N − drift region are further investigated for devices with two different dimensions.…”

Characteristics of Lateral Diffused Metal–Oxide–Semiconductor Transistors with Lightly Doped Drain Implantation through Gradual Screen Oxide

“…[1][2][3][4][5][6][7] The suppression of GIDL to improve off-state V BD has been reported by using dose optimization in the N-type minus (N-) drift region or structure modification. [8][9][10][11][12][13] However, most of the methods to improve off-state V BD also cause other side effects such as drivability current (I Dsat ) drop and on-resistance (R ON ) increase.…”