Because
the dielectric constant (K), the leakage
current density (J
g), and the interfacial
state density (D
it) are critical to high-K gate dielectrics, the layer-by-layer, in situ atomic layer bombardment (ALB) is proposed and explored to enhance
these electrical properties in this study. The in situ helium/argon plasma bombardment was performed layer-by-layer in
each cycle of atomic layer deposition (ALD) for preparing high-K gate dielectrics. As compared with the untreated high-K layer, the ALB treatment contributes to a significant
reduction in J
g by ∼3 orders of
magnitude, together with an ∼11% increase of K value and a decrease of D
it, of high-K gate dielectrics. The suppressed J
g and the enhanced K value are ascribed to
an increase of film density and a decrease of oxygen vacancies in
the ZrO2 layer by the ALB treatment. The atomic annealing
effect due to the ALB technique contributes to the decrease of D
it. The result demonstrates that the ALD together
with the ALB technique is highly effective to further enhance the
dielectric properties of nanoscale thin films, which is important
and applicable in a variety of fields including nanoelectronic, energy-saving,
and biomedical devices.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.