Atomic tailoring of low-thermal-budget and nearly wake-up-free ferroelectric Hf0.5Zr0.5O2 nanoscale thin films by atomic layer annealing

Effect of annealing temperature on energy storage performance of Ba(Zr0.35Ti0.65)O3 thin films under pure oxygen

“…This indicates that the annealing treatment at appropriate temperature is helpful to enhance the crystallinity and densification of the film, reduce the oxygen vacancy in the film, upgrade the polarization difference and breakdown field strength of the film, and obtain better energy storage performances. 18,28 To further demonstrate the superiority of this study, the performance parameters of some dielectric film materials of other perovskite types reported in other literature are summarized in Table 1. In comparison, the BZT35 film has higher W rec (55.99 J cm À3 ) and Z (92.1%), which is superior to most dielectric films in terms of performance, which indicates that this study has great possibilities in the application of energy storage materials.…”

“…For the sample annealed at 750 1C, the peak at 529.3 eV corresponds to the lattice oxygen (O L ), the peak at 530.7 eV corresponds to the oxygen vacancy (O V ), and the peak at 531.9 eV corresponds to the chemisorbed oxygen. 28 The area ratio of each sub-peak can be used to measure its content. For the sample annealed at 650 1C, the proportions of lattice oxygen, oxygen vacancies, and chemisorbed oxygen are 57.1%, 28.6%, and 14.3%, respectively; for the sample annealed at 700 1C, the proportions are 59.2%, 29.6%, and 11.2%, respectively; for the sample annealed at 750 1C, the proportions are 73.0%, 15.3%, and 11.7%, respectively; for the sample annealed at 800 1C, the proportions are 60.2%, 25.3%, and 14.5%, respectively.…”

“…This indicates that the annealing treatment at appropriate temperature is helpful to enhance the crystallinity and densification of the film, reduce the oxygen vacancy in the film, upgrade the polarization difference and breakdown field strength of the film, and obtain better energy storage performances. 18,28…”

Toward Low-Thermal-Budget Hafnia-Based Ferroelectrics via Atomic Layer Deposition

“…The highest temperature step in the fabrication process, which includes annealing and deposition, was referred to as the process temperature. (a) Effect of dopants on ferroelectricity of HfO 2 -based film. ,,,,− ,,− ,,, (b) Effect of precursor selection in HZO films ferroelectricity. ,,,− ,− (c) Oxygen source effect on the ferroelectric temperature of HZO films. ,,− ,,− …”

Synthesis, Structures, and Thermal Stability of Dialkyl and Bis(amido) Zirconium(IV) Acen Complexes

“…[1][2][3][4][5][6][7] Previously reported zirconium acen R complexes include [(acen R )ZrCl 2 ], [(acen R )ZrCl 2 (THF)], [8] [(acen R )Zr(CH 2 t Bu) 2 ] [9] (acen R = acen or acen-F 6 {C 2 H 4 (NCMeCHC(O)CF 3 ) 2 }) and [Zr(acen-F 6 ) 2 ], [10] as well as cationic alkyl derivatives such as [(acen-F 6 )Zr(CH 2 t Bu)L x ][B(C 6 F 5 ) 4 ] (L = NMe 2 Ph, PMe 2 Ph, PMe 3 or NCMe). [9] As part of a project focused on atomic layer deposition (ALD) [11][12][13][14] of zirconium-containing thin films, we became interested in zirconium(IV) complexes in which two transdisposed anionic ligands might be selectively removed by protonation by an alcohol or amine, and we considered that [(acen R )ZrR 2 ] (R = alkyl or amido) complexes could be suitable candidates. For use in ALD, precursor molecules should be sufficiently volatile for delivery into the reactor in the vapour phase (typically at a pressure between 0.1 and 1 Torr), and thermally stable enough to withstand weeks of heating at the delivery temperature.…”