Sub-7-nm textured ZrO2 with giant ferroelectricity

Stabilization of the Ferroelectric Phase in Epitaxial Hf1–xZrxO2 Enabling Coexistence of Ferroelectric and Enhanced Piezoelectric Properties

“…The PUND measurements for other samples are shown in Figure S10 in the Supporting Information. These P r values are near to those observed in sub-7 nm ZrO 2 films . The two switching contributions that appeared in DLCC and after PUND subtraction loops are reproducible in ZrO 2 films grown in different processes (see Figure S12 in the Supporting Information).…”

“…These P r values are near to those observed in sub-7 nm ZrO 2 films. 19 The two switching contributions that appeared in DLCC and after PUND subtraction loops are reproducible in ZrO 2 films grown in different processes (see Figure S12 in the Supporting Information). The described PFM characterization allows us to safely conclude that the first current peak (at 3 V) can be ascribed to ferroelectric switching.…”

“…This value can be enhanced in reduced films at the expense of leakage increase . The orthorhombic ferroelectric phase can be also stabilized in ZrO 2 films using several growth techniques showing remanent polarization values up to ≈50 μC/cm 2 , with poor or not reported endurance. ,,− Better endurance is displayed by electrostatically engineered intrinsically antiferroelectric ZrO 2 films owing to their low coercive field…”

Impact of Wet Annealing on Ferroelectric Phase Formation and Phase Transition of HfO2–ZrO2 System

“…21,22 Furthermore, it was reported that by performing PEALD in conjunction with the construction of the Pt surface structure, a large ferroelectricity comparable to a remanent polarization of approximately 50 μC/cm 2 could be achieved in an approximately 7 nm thick ZrO 2 film. 23 The control of the crystalline phase and ferroelectricity through the post-deposition process has not been reported, despite its technological importance in expanding the range of processes for the application of ZrO 2based ferroelectrics. Previously, with reference to the low-temperature degradation of ZrO 2 ceramics, 24,25 we demonstrated that wet annealing can drastically promote the t → o → m phase transition by comparing an approximately 17 nm thick HfO 2 film and ZrO 2 film, although dry O 2 annealing does not promote the t → o → m phase transition.…”

Crystal growth engineering and origin of the weak ferromagnetism in antiferromagnetic matrix of orthochromates from t-e orbital hybridization

“…Multiferroic materials have received considerable attention because of their potential application in electric and magnetic devices ( Fiebig et al., 2016 ; Huang et al., 2021 ; Hur et al., 2004 ; Jones et al., 2014 ; Spaldin and Ramesh, 2019 ). Within the materials, long-range orders such as ferroelectric and magnetic coexist and may interact strongly on each other, providing multi-tunable parameters for tailoring the macroscopic functionalities.…”