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Bulk micromachining in Si (110) wafer is an essential process for fabricating vertical microstructures by wet chemical etching. We compared the anisotropic etching properties of potassium hydroxide (KOH), tetra-methyl ammonium hydroxide (TMAH) and ethylene di-amine pyro-catechol (EDP) solutions. A series of etching experiments have been carried out using different etchant concentration and temperatures. Etching at elevated temperatures was found to improve the surface quality as well as shorten the etching time in all the etchants. At 120°C, we get a smooth surface (Ra = 21.2 nm) with an etching rate 12.2 lm/min in 40wt% KOH solution. At 125°C, EDP solution (88wt%) was found to produce smoothest surface (Ra = 9.4 nm) with an etch rate of 1.8 lm/min. In TMAH solution (25wt%), the best surface roughness was found to be 35.6 nm (Ra) at 90°C with an etch rate of 1.18 lm/min. The activation energy and preexponential factor in Arrhenius relation are also estimated from the corresponding etch rate data.

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In this report, the ferromagnetic shape memory alloy (Ni50Mn35In15) and Pb0.96La0.04Zr0.52Ti0.48O3 based bilayer (Ni-Mn-In/PLZT (260 nm/300 nm)), trilayer (Ni-Mn-In/PLZT/Ni-Mn-In (130 nm/300 nm/130 nm)) and four-layer (Ni-Mn-In/PLZT/Ni-Mn-In/PLZT (130 nm/150 nm/130 nm/150 nm)) multiferroic heterostructures with equal thickness ratios have been fabricated over Si substrates via DC/RF magnetron sputtering technique. The in-plane and out-of-plane magnetic hysteresis curves show the anisotropic nature of the ferromagnetic layer. The anisotropic magnetoelectric coupling characteristics have been investigated for all the fabricated devices by recording the induced magnetoelectric coupling voltages under both parallel and perpendicular applied magnetic fields to the plane of the device. Compared to all fabricated heterostructures, the trilayer structure exhibits the highest magnetoelectric coupling coefficients with 1.56 V/(cm Oe)-1 and 2.01 V/(cm Oe)-1 in longitudinal and transverse configurations, respectively. This anisotropic nature of magnetoelectric coupling can be used to measure the applied magnetic field direction. The rarely reported anisotropic AC magnetic field sensing parameters of the fabricated devices like Pearson’s r, sensitivity, and inaccuracy have been calculated. The trilayer device exhibits excellent AC magnetic field sensing parameters with inaccuracy, sensitivity, and linearity of 1.856% full-scale output (FSO), 0.63 mV cm−1 and 0.9993 in longitudinal configuration while 1.755% FSO, 1.18 mV Oe−1, and 0.9993 in the transverse configuration, respectively. Such nanoscale ferromagnetic shape memory alloys based symmetric multilayered multiferroic heterostructures pave the way for the design and development of futuristic MEMS magnetoelectric magnetic field sensor to detect the magnetic field and its spatial orientation.

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