Structural characterization of polycrystalline thin films by X-ray diffraction techniques

Pandey, Akhilesh; Dalal, Sandeep; Dutta, Shankar; Dixit, Ambesh

doi:10.1007/s10854-020-04998-w

Cited by 78 publications

(52 citation statements)

References 85 publications

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“…However, the peak intensity of the (222) reflection, which corresponds to the lowest surface energy with the highest atomic pack density, was enhanced where the (400) reflection became weaker, compared to those for the In 2 O y film. The volume fraction of surface normal plane can be accurately accessed by using Bragg–Brentano geometry where the incident angle ω between X-ray source and the sample is always one-half of the detector angle 2θ Figure a depicts the diffraction patterns under Bragg–Brentano geometry for the In 2 O y and In 1.60 Ga 0.40 O y films, which shows two differences in the diffraction patterns.…”

Section: Results and Discussionmentioning

confidence: 99%

High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium–Gallium Oxide Channel for Back-End-of-Line Compatible Transistor Applications: Cation Combinatorial Approach

Hur

Kim

Yoon

et al. 2022

ACS Appl. Mater. Interfaces

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In this paper, the feasibility of an indium−gallium oxide (In 2(1-x) Ga 2x O y ) film through combinatorial atomic layer deposition (ALD) as an alternative channel material for back-endof-line (BEOL) compatible transistor applications is studied. The microstructure of random polycrystalline In 2 O y with a bixbyite structure was converted to the amorphous phase of In 2(1−x) Ga 2x O y film under thermal annealing at 400 °C when the fraction of Ga is ≥29 at. %. In contrast, the enhancement in the orientation of the (222) face and subsequent grain size was observed for the In 1.60 Ga 0.40 O y film with the intermediate Ga fraction of 20 at. %. The suitability as a channel layer was tested on the 10-nm-thick HfO 2 gate oxide where the natural length was designed to meet the requirement of short channel devices with a smaller gate length (<100 nm). The In 1.60 Ga 0.40 O y thin-film transistors (TFTs) exhibited the high field-effect mobility (μ FE ) of 71.27 ± 0.98 cm 2 /(V s), low subthreshold gate swing (SS) of 74.4 mV/decade, threshold voltage (V TH ) of −0.3 V, and I ON/OFF ratio of >10 8 , which would be applicable to the logic devices such as peripheral circuit of heterogeneous DRAM. The in-depth origin for this promising performance was discussed in detail, based on physical, optical, and chemical analysis.

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Section: Results and Discussionmentioning

confidence: 99%

High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium–Gallium Oxide Channel for Back-End-of-Line Compatible Transistor Applications: Cation Combinatorial Approach

Hur

Kim

Yoon

et al. 2022

ACS Appl. Mater. Interfaces

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“…Also, it can be calculated by the crystalline XRD peak integrated over the area divided by the film's total integrated area in the XRD pattern. 52 where A C is the crystalline XRD peak integrated area and A T is the total integrated area of the XRD pattern. The degree of crystallinity critically depends on the spin speed.…”

Section: Resultsmentioning

confidence: 99%

“…Also, it can be calculated by the crystalline XRD peak integrated over the area divided by the lm's total integrated area in the XRD pattern. 52…”

Section: Structural Analysismentioning

confidence: 99%

Self-biased photodetector using 2D layered bismuth triiodide (BiI₃) prepared using the spin coating method

et al. 2022

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“…Figure 2 showed three dominant peaks, i.e., plane ( 100), (002), and (101). Since peaks of ( 002) and ( 101) were too close, then the preferred orientation was determined by using its texture coefficient (TC) calculation as follow (Romero et al, 2006;Pandey et al, 2021):…”

Section: Methodsmentioning

confidence: 99%

Structure, morphology, and optical properties of ZnO:Mg thin film prepared by sol-gel spin coating method

et al. 2021

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This research was conducted to analyze the Mg doping concentration effect on the structure, morphology, and optical properties of ZnO thin film prepared using the sol gel spin coating method. The Mg concentration was varied in the mole fraction of 1%, 3%, and 5%. Firstly, ZnO: Mg solution was dropped on a substrate and grown with a rotating speed of 3000 rpm and then annealed at 500 °C for 2 hours. The characterization of thin films' structure, morphology, and optical properties was done using XRD, FESEM, EDX, and UV-VIS spectrophotometer. XRD result showed a polycrystalline structure with three dominant peaks of (100), (002), and (101) plane, hexagonal wurtzite structures. Furthermore, the crystallite size was increased with the increase of Mg doping. FESEM results showed that the 5% ZnO: Mg thin film was the densest and least void from other films. In addition, the results of UV-Vis-NIR analysis showed the highest absorption value at a wavelength of 360-370 nm. The bandgap energy increased at 1% and 3% Mg doping samples but decreased by 5% Mg doping comes from the excess of oxygen in thin film with 5% Mg doping.

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Structural characterization of polycrystalline thin films by X-ray diffraction techniques

Cited by 78 publications

References 85 publications

High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium–Gallium Oxide Channel for Back-End-of-Line Compatible Transistor Applications: Cation Combinatorial Approach

High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium–Gallium Oxide Channel for Back-End-of-Line Compatible Transistor Applications: Cation Combinatorial Approach

Self-biased photodetector using 2D layered bismuth triiodide (BiI₃) prepared using the spin coating method

Structure, morphology, and optical properties of ZnO:Mg thin film prepared by sol-gel spin coating method

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Structural characterization of polycrystalline thin films by X-ray diffraction techniques

Cited by 78 publications

References 85 publications

High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium–Gallium Oxide Channel for Back-End-of-Line Compatible Transistor Applications: Cation Combinatorial Approach

High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium–Gallium Oxide Channel for Back-End-of-Line Compatible Transistor Applications: Cation Combinatorial Approach

Self-biased photodetector using 2D layered bismuth triiodide (BiI3) prepared using the spin coating method

Structure, morphology, and optical properties of ZnO:Mg thin film prepared by sol-gel spin coating method

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Self-biased photodetector using 2D layered bismuth triiodide (BiI₃) prepared using the spin coating method