bHepatitis C virus (HCV) core protein is essential for virus assembly. HCV core protein was expressed and purified. Aptamers against core protein were raised through the selective evolution of ligands by the exponential enrichment approach. Detection of HCV infection by core aptamers and the antiviral activities of aptamers were characterized. The mechanism of their anti-HCV activity was determined. The data showed that selected aptamers against core specifically recognize the recombinant core protein but also can detect serum samples from hepatitis C patients. Aptamers have no effect on HCV RNA replication in the infectious cell culture system. However, the aptamers inhibit the production of infectious virus particles. Beta interferon (IFN-␤) and interferon-stimulated genes (ISGs) are not induced in virally infected hepatocytes by aptamers. Domains I and II of core protein are involved in the inhibition of infectious virus production by the aptamers. V31A within core is the major resistance mutation identified. Further study shows that the aptamers disrupt the localization of core with lipid droplets and NS5A and perturb the association of core protein with viral RNA. The data suggest that aptamers against HCV core protein inhibit infectious virus production by disrupting the localization of core with lipid droplets and NS5A and preventing the association of core protein with viral RNA. The aptamers for core protein may be used to understand the mechanisms of virus assembly. Core-specific aptamers may hold promise for development as early diagnostic reagents and potential therapeutic agents for chronic hepatitis C.

A novel substrate-free uncooled IR detector based on an optical-readable method is presented and fabricated successfully. The detector is composed of a bi-material (BM) cantilever array, without a silicon substrate, which is eliminated in the fabrication process. Compared with the generally used sacrificial layer cantilever, the loss of incident IR energy caused by the reflection from and absorption by the silicon substrate is eliminated completely in the substrate-free structure. The IR radiation reaching the IR detector surface increases by over 80% in the case of the novel substrate-free detector array structure, compared to the sacrificial layer structure. Moreover, the substrate-free structure has less heat loss than the sacrificial layer structure. The results of thermal imaging of the human body show the detector is able to sense objects at room temperature. The experimental NETD was estimated to be 200 mK.

The ability of light beams to rotate nano-objects has important applications in optical micromachines and biotechnology. However, due to the diffraction limit, it is challenging to rotate nanoparticles at subwavelength scale. Here, we propose a method to obtain controlled fast orbital rotation (i.e., circumgyration) at deep subwavelength scale, based on the nonlinear optical effect rather than sub-diffraction focusing. We experimentally demonstrate rotation of metallic nanoparticles with orbital radius of 71 nm, to our knowledge, the smallest orbital radius obtained by optical trapping thus far. The circumgyration frequency of particles in water can be more than 1 kHz. In addition, we use a femtosecond pulsed Gaussian beam rather than vortex beams in the experiment. Our study provides paradigms for nanoparticle manipulation beyond the diffraction limit, which will not only push toward possible applications in optically driven nanomachines, but also spur more fascinating research in nano-rheology, micro-fluid mechanics and biological applications at the nanoscale.

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We have fabricated the thinnest equivalent oxide thickness of 0.62 nm HfLaON gate dielectric for TaN/HfLaON/SiOx gate stack with improved thermal stability and electrical characteristics. The HfLaON film was deposited using reactive sputtering of Hf–La and Hf targets by alternate means in N2/Ar ambience. The effects of different postdeposition annealing conditions and various La contents on the properties of HfLaON film and its interface have been investigated; the corresponding mechanisms are discussed. The gate tunneling leakage is five orders of magnitude lower than the normal polycrystalline silicon/SiO2 structure. The effective work function with TaN metal gate is 4.06 eV.

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This paper describes a micro thermal shear stress sensor with a cavity underneath, based on vacuum anodic bonding and bulk micromachined technology. A Ti/Pt alloy strip, 2μm × 100μm, is deposited on the top of a thin silicon nitride diaphragm and functioned as the thermal sensor element. By using vacuum anodic bonding and bulk-si anisotropic wet etching process instead of the sacrificial-layer technique, a cavity, functioned as the adiabatic vacuum chamber, 200μm × 200μm × 400μm, is placed between the silicon nitride diaphragm and glass (Corning 7740). This method totally avoid adhesion problem which is a major issue of the sacrificial-layer technique.