In this study, a high-performance AlGaN/GaN high electron mobility transistor (HEMT) is presented to improve its electrical operation by employing an inner field-plate (IFP) structure. Prior to the IFP structure analysis, we compared the measured and simulated direct current characteristics of the fabricated two-finger conventional T-shaped gate HEMTs. Then, the AlGaN/GaN HEMT with a drain-side field plate (FP) structure was suggested to enhance the breakdown voltage characteristics. The maximum breakdown voltage recorded with a 0.8 µm stretched FP structure was 669 V. Finally, the IFP structure was interfaced with the gate head of the device to compensate the radio frequency characteristics, choosing the optimum length of the drain-side FP structure. Compared to the 0.8 µm stretched FP structure, the IFP structure showed improved frequency characteristics with minimal difference to the breakdown voltage. The frequency variation caused by changing the passivation thickness was also analyzed, and the optimum thickness was identified. Thus, IFP AlGaN/GaN HEMT is a promising candidate for high-power and high-frequency applications.
In this study, we consider the relationship between the temperature in a two-dimensional electron gas (2-DEG) channel layer and the RF characteristics of an AlGaN/GaN high-electron-mobility transistor by changing the geometrical structure of the field-plate. The final goal is to achieve a high power efficiency by decreasing the channel layer temperature. First, simulations were performed to compare and contrast the experimental data of a conventional T-gate head structure. Then, a source-bridged field-plate (SBFP) structure was used to obtain the lower junction temperature in the 2-DEG channel layer. The peak electric field intensity was reduced, and a decrease in channel temperature resulted in an increase in electron mobility. Furthermore, the gate-to-source capacitance was increased by the SBFP structure. However, under the large current flow condition, the SBFP structure had a lower maximum temperature than the basic T-gate head structure, which improved the device electron mobility. Eventually, an optimum position of the SBFP was used, which led to higher frequency responses and improved the breakdown voltages. Hence, the optimized SBFP structure can be a promising candidate for high-power RF devices.
We proffer NH4OH-oriented and pH-dependent growth of ZnO nanostructures via a microwaveassisted growth method. The fabrication of ZnO nanorods (ZNRs), nanoflowers (ZNFs), nanostars (ZNSs), and nanotetrapods (ZNTs) is presented. NH4OH was used as a mineralizer to change the solution pH for nanostructure growth, where temperature and other variables were fixed. Because of an efficient heat transfer and facile growth of nanostructures, a domestic microwave oven was used to facilitate the nanostructure growth in the span of just 10-15 min. The results showed that the growth of ZnO nanostructures was dependent upon the number of growth units and ZnO nuclei present in the solution, which ultimately depend upon the pH of the solution. At the outset, without the addition of NH4OH, the pH of the solution was ~6.8 and the ZNRs were formed in the solution or on a seeded substrate which persisted in the pH range of ~6.8-9. An abrupt change in the shapes and the types of the nanostructures was observed when the pH was boosted beyond 10. A transition from ZNRs to ZNFs was observed at pH 10 and ZNFs were formed at pH 11. The solution gave birth to ZNSs and ZNTs when the pH was further raised to 12 and 13, respectively.
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