Breakdown Voltage Enhancement in AlGaN/GaN High-Electron Mobility Transistor by Optimizing Gate Field-Plate Structure

Park, Yejin; Kwak, Hyeon-Tak; Chang, Seung-Bo

doi:10.1166/jnn.2019.15991

Cited by 2 publications

(1 citation statement)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, a gate leakage current degrades a device's electrical properties, power efficiency, and stability during operation. Generally, a gate leakage current is affected by a high lattice temperature and electric field and occurs mostly near the drain-side gate head edge [4][5][6][7][8][9][10]. When an insulator is placed between the gate metal and semiconductor, i.e., metal-insulator-semiconductor field-effect transistor, an electric field generated by the gate voltage is strongly formed in the insulator having a large resistance, such that the input impedance becomes very large and the gate leakage current can be reduced.…”

Section: Introductionmentioning

confidence: 99%

Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect

et al. 2019

View full text Add to dashboard Cite

This study investigates metal-insulator-semiconductor high electron mobility transistor DC characteristics with different gate dielectric layer compositions and thicknesses, and lattice temperature effects on gate leakage current by using a two-dimensional simulation. We first compared electrical properties, including threshold voltage, transconductance, and gate leakage current with the self-heating effect, by applying a single Si3N4 dielectric layer. We then employed different Al2O3 dielectric layer thicknesses on top of the Si3N4, and also investigated lattice temperature across a two-dimensional electron gas channel layer with various dielectric layer compositions to verify the thermal effect on gate leakage current. Gate leakage current was significantly reduced as the dielectric layer was added, and further decreased for a 15-nm thick Al2O3 on a 5-nm Si3N4 structure. Although the gate leakage current increased as Al2O3 thickness increased to 35 nm, the breakdown voltage was improved.

show abstract