Operational Improvement of AlGaN/GaN High Electron Mobility Transistor by an Inner Field-Plate Structure

Kwak, Hyeon-Tak; Chang, Seung-Bo; Kim, Hyun-Jung; Jang, Kyu-Won; Yoon, Hyung Sup; Lee, Sang‐Heung; Lim, Jong−Won

doi:10.3390/app8060974

Cited by 23 publications

(14 citation statements)

References 36 publications

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“…These transistors, mostly MOSFETs and IGBTs, are made from materials such as silicon carbide (SiC), gallium nitride (GaN), indium phosphide (InP), aluminum gallium nitride (AlGaN), etc. to list just a few, have continued to show a lot of promise as improvements are being made faster and faster as the different researches surface [171][172][173][174][175][176][177][178][179][180][181][182][183]. Taking advantage of this technology, manufacturers of power electronic switches can now begin to look into making the four quadrant switches.…”

Section: Discussionmentioning

confidence: 99%

Overview of Power Electronic Switches: A Summary of the Past, State-of-the-Art and Illumination of the Future

Jiya

Gouws

2020

Micromachines

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As the need for green and effective utilization of energy continues to grow, the advancements in the energy and power electronics industry are constantly driven by this need, as both industries are intertwined for obvious reasons. The developments in the power electronics industry has over the years hinged on the progress of the semiconductor device industry. The semiconductor device industry could be said to be on the edge of a turn into a new era, a paradigm shift from the conventional silicon devices to the wide band gap semiconductor technologies. While a lot of work is being done in research and manufacturing sectors, it is important to look back at the past, evaluate the current progress and look at the prospects of the future of this industry. This paper is unique at this time because it seeks to give a good summary of the past, the state-of-the-art, and highlight the opportunities for future improvements. A more or less ‘forgotten’ power electronic switch, the four-quadrant switch, is highlighted as an opportunity waiting to be exploited as this switch presents a potential for achieving an ideal switch. Figures of merit for comparing semiconductor materials and devices are also presented in this review.

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Section: Discussionmentioning

confidence: 99%

Overview of Power Electronic Switches: A Summary of the Past, State-of-the-Art and Illumination of the Future

Jiya

Gouws

2020

Micromachines

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“…20 Although field plate incorporation demonstrates superior breakdown performance, the increase of intrinsic parasitic gate-source (C gs ) and gate-drain (C gd ) or Miller capacitance degrades the RF performance. 21,22 So far, comprehensive work regarding the breakdown performance has been done with regards to studying field plate geometry and its impact on trapping and current collapse mitigation. 23 Multiple stacked field plates have also been developed to improve field redistribution and hence breakdown voltage, but at the same time, this design involves multilayer photolithographic processing for different field plates in addition to a dramatic increase in capacitance which limits the high-frequency and switching performance.…”

Section: Introductionmentioning

confidence: 99%

Analysis of AlGaN/GaN HEMT and Its Operational Improvement Using a Grated Gate Field Plate

Bhat

Shafi

Sahu

et al. 2021

J. Electron. Mater.

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This paper investigates the DC and RF performance of a gate field plate (GFP) and proposed grated gate field plate (GGFP) AlGaN/GaN high electron mobility transistor (HEMT) with a gate length of 0.25 μ m through experimentally calibrated simulations. The GFP HEMT technology enhances breakdown voltage but influences the capacitive nature of the device with parasitic capacitance, particularly Miller's capacitance, into action reducing its radio frequency and switching performance. To improve the electrical operation of a GFP HEMT, a grated gate field plate (GGFP) HEMT structure is proposed which exhibits operational improvements in terms of output current (1 A/mm), transconductance (350 mS/mm), and at the same time, reduces the parasitic capacitance effectively. We observe a 60% improvement in cut off frequency of the proposed GGFP HEMT (28.3 GHz) with respect to GFP HEMT (17.6 GHz) with little decrease in breakdown voltage. This study shows that the proposed device structure (GGFP HEMT) due to its effective capacitance reduction has better suitability and is a viable technique for future radio frequency applications.

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“…To be specific, phonon scattering enhanced by SHE degrades the direct current (DC) and radio frequency (RF) characteristics of HEMTs. Therefore, to control such influences, research on field plates, high thermal conductivity materials, and air-water cooling systems has been actively conducted [10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study

et al. 2019

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In this study, we investigated the operational characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) by applying the copper-filled trench and via structures for improved heat dissipation. Therefore, we used a basic T-gate HEMT device to construct the thermal structures. To identify the heat flow across the device structure, a thermal conductivity model and the heat transfer properties corresponding to the GaN, SiC, and Cu materials were applied. Initially, we simulated the direct current (DC) characteristics of a basic GaN on SiC HEMT to confirm the self-heating effect on AlGaN/GaN HEMT. Then, to verify the heat sink effect of the copper-filled thermal structures, we compared the DC characteristics such as the threshold voltage, transconductance, saturation current, and breakdown voltage. Finally, we estimated and compared the lattice temperature of a two-dimensional electron gas channel, the vertical lattice temperature near the drain-side gate head edge, and the transient thermal analysis for the copper-filled thermal trench and via structures. Through this study, we could optimize the operational characteristics of the device by applying an effective heat dissipation structure to the AlGaN/GaN HEMT.

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Operational Improvement of AlGaN/GaN High Electron Mobility Transistor by an Inner Field-Plate Structure

Cited by 23 publications

References 36 publications

Overview of Power Electronic Switches: A Summary of the Past, State-of-the-Art and Illumination of the Future

Overview of Power Electronic Switches: A Summary of the Past, State-of-the-Art and Illumination of the Future

Analysis of AlGaN/GaN HEMT and Its Operational Improvement Using a Grated Gate Field Plate

Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study

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