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Cyclopentasilane (CPS) has been studied as an liquid precursor for the deposition of thin silicon films for printed electronics and related applications. The processing involves a UV‐induced prepolymerization of CPS followed by liquid deposition and low‐temperature thermolysis. An insight into the oligomer and polymer formation including crosslinking in solution using 29Si NMR spectroscopy and electron spin resonance spectroscopy is reported. Formation of SiH (T‐units) and SiH3 (M‐units) is observed as well as short‐lived paramagnetic species. Additionally, the polymerization is followed by Raman spectroscopy. Reactive molecular dynamics simulations are applied to develop a theoretical model for the CPS‐ring‐opening and crosslinking steps. The experimental and computational data correspond well to each other and allow insight into the mechanism of polymer formation. The processing steps include spin‐coating, thermal drying, and conversion to amorphous silicon, H‐passivation, and fabrication of a CPS‐derived thin‐film transistor (TFT), without intermediate silicon crystallization. Further improvement is gained by using tetralene as a solvent, leading to a reduction of the time‐consuming polymerization step by one order of magnitude compared to cyclooctane. The overall quality and characteristics of the CPS‐derived spin‐coated silicon thin films correspond to standard plasma enhanced chemical vapor deposition‐derived devices with respect to performance levels.

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Basal Plane Dislocations (BPDs) in SiC are thought to cause degradation of bipolar diodes with blocking voltages > 2kV by triggering the formation and expansion of stacking faults during device operation. Hence, low N doped, thick epitaxial layers without BPDs are urgently needed for the realization of long-term stable SiC bipolar diodes. Such epilayers can be achieved if the conversion of the BPD into another harmless dislocation type is supported by proper epitaxial growth parameters and use of vicinal (off-cut) substrates. In this work, the influence of the substrate’s off-cut angle and of the epilayer thickness on BPD density and surface morphology were investigated. The BPD densities of epilayers grown on 2° and 4° off-cut substrates were very low compared to growth on 8° off-axis substrates. X-Ray Topography has proved that all the Threading Dislocations (TD) propagate from the substrate to the epilayer and that BPDs in the substrate convert to Threading Edge Dislocations (TED) in the epilayer, i.e. the dislocation density (DD) of the substrate determines the epilayer’s DD. The conversion of BPDs is supported by the presence of bunched steps as for growth of thick layers on 2° and 4° off-cut substrates.