Threading dislocations in n- and p-type 4H–SiC material analyzed by etching and synchrotron X-ray topography

Kallinger, Birgit; Polster, Sebastian; Berwian, Patrick; Friеdrich, J.; Müller, G.; Danilewsky, A.N.; Wehrhahn, A.; Weber, Arnd-Dietrich

doi:10.1016/j.jcrysgro.2010.10.145

Cited by 50 publications

(50 citation statements)

References 16 publications

(32 reference statements)

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“…Then, each epilayer surface was investigated by optical light microscopy at 70 measurements points being regularly distributed across one half of each wafer. As all epilayers are n-type with a net carrier concentration of low 10 15 cm À3 , the etch pits are interpreted as follows: 9 BPDs are decorated by oval shaped etch pits, TEDs, TED II, and TED III dislocations by small hexagonally shaped etch pits and threading screw dislocations (TSDs) by large hexagonally shaped etch pits, respectively.…”

Section: Defect Selective Etchingmentioning

confidence: 99%

“…Different types of TEDs, i.e., TED, TED II, and TED III dislocations, can only be distinguished based on their visibility in SXRT topographs and their black/white contrast. 9 All types of TEDs are assumed to have an a-type Burgers vector. The dislocation line of TEDs is exactly oriented along the h0001i direction, whereas the dislocation line of TED II and TED III dislocations can deviate up to 20 from the c-axis.…”

Section: A Behavior Of Dislocations During Epigrowthmentioning

confidence: 99%

“…7,8 Such inclined TEDs are also known as TED II and TED III dislocations and can be identified based on their visibility in x-ray topographs. 9 Although the BPD conversion mechanism is not fully understood on the microscopic level, 7 a pertinent model explains the behavior of dislocations at the growth interface based on dislocation energetics. This model was first invented by Klapper 10 for dislocations in a growing organic crystal and has been applied to semiconducting hexagonal crystals like, e.g., gallium nitride (GaN) by Knoke et al 11 and 4H-SiC by Refs.…”

Section: Introductionmentioning

confidence: 99%

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Experimental verification of the model by Klapper for 4H-SiC homoepitaxy on vicinal substrates

Kallinger

Polster

Berwian

et al. 2013

Journal of Applied Physics

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4H-SiC homoepitaxial layers free of basal plane dislocations (BPDs) are urgently needed to overcome the so-called bipolar degradation of high-voltage devices. BPDs being present in substrates are able to either propagate to the epilayer or convert to harmless threading edge dislocations (TEDs) in the epilayer. The model by Klapper predicts the conversion of BPDs to TEDs to be more efficient for growth on vicinal substrates with low off-cut angle. This paper aims to verify the model by Klapper by an extensive variation of epitaxial growth parameters and the substrates' off-cut. It is shown that the off-cut angle is the key parameter for growth of BPD-free epilayers. Furthermore, it is shown that the model also describes adequately the behavior of different types of TEDs, i.e., TED II and TED III dislocations, during epitaxial growth. Therefore, the model by Klapper is verified successfully for 4H-SiC homoepitaxial growth on vicinal substrates. V C 2013 AIP Publishing LLC. [http://dx

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Section: Defect Selective Etchingmentioning

confidence: 99%

Section: A Behavior Of Dislocations During Epigrowthmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Experimental verification of the model by Klapper for 4H-SiC homoepitaxy on vicinal substrates

Kallinger

Polster

Berwian

et al. 2013

Journal of Applied Physics

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“…Others also try to develop solution growth as an alternative to the usual sublimation method [3,4]. They thus have to routinely identify and count linear defects in SiC wafers and crystals, a task which can be conveniently achieved through the use of X-ray topography [5], transmission electron microscopy (TEM) [6] or KOH etching [7]. Birefringence microscopy is an additional, nondestructive technique which was proposed by Kato et al [8] and then by Ma et al in the case of SiC [9,10], and subsequently developed by others (see, e.g., [11,12] as well as the Refs.…”

Section: Introductionmentioning

confidence: 99%

Critical assessment of birefringence imaging of dislocations in 6H silicon carbide

Hoa

Ouisse

Chaussende

2012

Journal of Crystal Growth

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“…It is known that synchrotron white beam X-ray topography has the characteristics of being sensitive to the strain. Taking advantage of the above-mentioned characteristics, Kallinger et al [2] systematically analysed the dislocations, which connect with the strain field, in n-and p-type 4H-SiC with use of the synchrotron white beam X-ray topographic measurement. On the other hand, the measurement system for synchrotron white beam X-ray topography is not suitable for the routine inspection of the SiC wafers in the mass production.…”

mentioning

confidence: 99%

Circular polariscopic measurement of a semi‐insulating SiC wafer for evaluating strains and its relation with Raman spectra: Superiority to monochromatic Lang X‐ray topography

Takeuchi

2011

Phys. Status Solidi C

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We have explored the effectiveness of applying the circular polariscopic measurement to the mapping of the strains in a semi‐insulating 6H‐SiC wafer. Initially, monochromatic Lang X‐ray topography, which is regarded as a fundamental evaluation technique for wafers, is applied. In the monochromatic Lang X‐ray topograph, the disappearance of the images is found in various areas, which suggests that the monochromatic Lang X‐ray topographic measurement is not almighty. Next, we apply the circular polariscopic measurement, which is sensitive to strains through the photoelastic effect. The brightness of the circular polariscopic wafer map reveals that the inhomogeneous distribution of the strains. The observed phenomenon indicates that the magnitude of the crystal‐plane distortion is too strong to apply monochromatic Lang X‐ray topography. The presence of the relatively large strains is confirmed from the fact that the forbidden reflection lines are observed in the θ ‐2θ X‐ray diffraction pattern. We also measure the Raman spectra of the several region of the wafer to evaluate the stress from the phonon frequency shift. The maximum stress is estimated to be ∼490 MPa. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Threading dislocations in n- and p-type 4H–SiC material analyzed by etching and synchrotron X-ray topography

Cited by 50 publications

References 16 publications

Experimental verification of the model by Klapper for 4H-SiC homoepitaxy on vicinal substrates

Experimental verification of the model by Klapper for 4H-SiC homoepitaxy on vicinal substrates

Critical assessment of birefringence imaging of dislocations in 6H silicon carbide

Circular polariscopic measurement of a semi‐insulating SiC wafer for evaluating strains and its relation with Raman spectra: Superiority to monochromatic Lang X‐ray topography

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