An optimized CMOS-MEMS resonant pressure sensor with enhanced sensitivity at atmospheric pressure has been reported in this paper. The presented work reports modeling and characterization of a resonant pressure sensor, based on the variation of the quality factor with pressure. The relevant regimes of air flow have been determined by the Knudsen number (Kn), which is the ratio of the mean free path of the gas molecule to the characteristic length of the device. The sensitivity has been monitored for the resonator design from low vacuum to atmospheric levels of air pressure. This has been accomplished by reducing the characteristic length and optimization of other parameters for the device. While the existing analytical model has been adapted to simulate the squeeze film damping effectively and it is validated at higher values of air pressure, it fails to compute the structural damping mechanisms dominant in the molecular flow regime, i.e. at lower levels of air pressure. This discrepancy has been solved by finite element modeling that has incorporated both structural and film damping effects. The sensor has been designed with an optimal geometry of 140 µm x 140 µm x 8 µm having 6 x 6 perforations along the row and column of the plate respectively, for maximum Q, with an effective mass of 0.4 µg. An enhanced quality factor of 60 and reduced damping coefficient of 4.34 µNs/m have been obtained for the reported device at atmospheric pressure. The sensitivity of the manufactured device is approximately-0.09 at atmospheric pressure and increases to-0.3 at 40 kPa i.e. in the lower pressures of slip flow regime. The experimental measurements of the manufactured resonant pressure sensor have been compared with that of the analytical and finite element modeling to validate the optimization procedure. The device has been manufactured using standard 250-nm CMOS technology followed by an in-house BEOL metal-layer release through wet etching.
This work presents the design and characterization of a resonant CMOS-MEMS pressure sensor manufactured in a standard 180 nm CMOS industry-compatible technology. The device consists of aluminum square plates attached together by means of tungsten vias integrated into the back end of line (BEOL) of the CMOS process. Three prototypes were designed and the structural characteristics were varied, particularly mass and thickness, which are directly related to the resonance frequency, quality factor, and pressure; while the same geometry at the frontal level, as well as the air gap, were maintained to allow structural comparative analysis of the structures. The devices were released through an isotropic wet etching step performed in-house after the CMOS die manufacturing, and characterized in terms of Q-factor vs. pressure, resonant frequency, and drift vs. temperature and biasing voltage.
This paper presents a behavioral modeling technique for CMOS-MEMS microresonators that enables simulation of a MEMS resonator model in Analog Hardware Description Language (AHDL) format within a system-level circuit simulation. A 100 kHz CMOS-MEMS resonant pressure sensor has been modeled into Verilog-A code and successfully simulated within Cadence framework. Analysis has shown that simulation results of the reported model are in agreement with the device characterization results. As an application of the proposed methodology, simulation and results of the model together with an integrated monolithic low-noise amplifier is exemplified for detecting the position change of the resonator.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.