Abstract:An optimized CMOS-MEMS resonant pressure sensor with enhanced sensitivity at atmospheric pressure has been reported in this paper. The presented work reports modeling and characterization of a resonant pressure sensor, based on the variation of the quality factor with pressure. The relevant regimes of air flow have been determined by the Knudsen number (Kn), which is the ratio of the mean free path of the gas molecule to the characteristic length of the device. The sensitivity has been monitored for the resona… Show more
“…1 has been designed with an optimal geometry of 140 × 140 × 8 µm having 6 × 6 perforations along the row and column of the plate, respectively, for maximum Q, with an effective mass of 0.4 µg. An enhanced quality factor of 60 and reduced damping coefficient of 4.34 µNs/m have been obtained for the reported device at atmospheric pressure [13]- [17]. The reported capacitive pressure sensor, fabricated using IHP SG25 process, is implemented as a two aluminum layers (with a thickness of 2 μm and 3 μm) separated by a 3 μm thick tungsten via [13].…”
Section: High-level Model For Cmos-mems Resonatormentioning
confidence: 93%
“…This paper presents a comprehensive guide to the modeling and simulation methodology of a CMOS-MEMS resonator in Verilog-A within Cadence framework. In Section II, a second order non-linear behavioral model, targeted to emulate the realtime behavior of a prior reported CMOS-MEMS resonator [13] is introduced. The model is written in Verilog-A and the simulations are performed within the Cadence framework, allowing co-simulation of MEMS with electronics.…”
This paper presents a behavioral modeling technique for CMOS-MEMS microresonators that enables simulation of a MEMS resonator model in Analog Hardware Description Language (AHDL) format within a system-level circuit simulation. A 100 kHz CMOS-MEMS resonant pressure sensor has been modeled into Verilog-A code and successfully simulated within Cadence framework. Analysis has shown that simulation results of the reported model are in agreement with the device characterization results. As an application of the proposed methodology, simulation and results of the model together with an integrated monolithic low-noise amplifier is exemplified for detecting the position change of the resonator.
“…1 has been designed with an optimal geometry of 140 × 140 × 8 µm having 6 × 6 perforations along the row and column of the plate, respectively, for maximum Q, with an effective mass of 0.4 µg. An enhanced quality factor of 60 and reduced damping coefficient of 4.34 µNs/m have been obtained for the reported device at atmospheric pressure [13]- [17]. The reported capacitive pressure sensor, fabricated using IHP SG25 process, is implemented as a two aluminum layers (with a thickness of 2 μm and 3 μm) separated by a 3 μm thick tungsten via [13].…”
Section: High-level Model For Cmos-mems Resonatormentioning
confidence: 93%
“…This paper presents a comprehensive guide to the modeling and simulation methodology of a CMOS-MEMS resonator in Verilog-A within Cadence framework. In Section II, a second order non-linear behavioral model, targeted to emulate the realtime behavior of a prior reported CMOS-MEMS resonator [13] is introduced. The model is written in Verilog-A and the simulations are performed within the Cadence framework, allowing co-simulation of MEMS with electronics.…”
This paper presents a behavioral modeling technique for CMOS-MEMS microresonators that enables simulation of a MEMS resonator model in Analog Hardware Description Language (AHDL) format within a system-level circuit simulation. A 100 kHz CMOS-MEMS resonant pressure sensor has been modeled into Verilog-A code and successfully simulated within Cadence framework. Analysis has shown that simulation results of the reported model are in agreement with the device characterization results. As an application of the proposed methodology, simulation and results of the model together with an integrated monolithic low-noise amplifier is exemplified for detecting the position change of the resonator.
“…Here z, , ̈ are the displacement, velocity, and acceleration of the system respectively [12]. An flexural mode resonator has been analytically developed and numerically validated by FEM models in COMSOL Multiphysics in order to optimize the Q sensitivity without affecting the device capacitance [12], [13].The pressure sensor design has an effective mass of 0.4 µg with an optimal geometry of 140 µm × 140 µm × 8 µm having 6 × 6 perforations along the row and column of the plate, respectively, to achieve maximum Q while presenting an acceptable capacitance variation to the electronics [14].…”
Section: Device Design and Fabricationmentioning
confidence: 99%
“…In Equation (2), Kn has been used to characterize both pressure and temperature, which in turn has characterized the device performance in terms of Q, discussed in the following sub-sections. An in-detail information on the significance of the Knudsen number can be found in [13].…”
Section: B Device Characterization Under Environmentalmentioning
confidence: 99%
“…25 °C, and for a fixed bias voltage of 10 V. The oscillatory excitation amplitude was limited to 30 mV for all measurements to mitigate the nonlinearity effects due to excessive amplitude vibration. The device quality factor was obtained from the frequency response by aligning and validating them with the response of a second-order behavioral model using Q as one of its inputs [13], [17]. The manufactured sensor was primarily operated in the slip flow and transition flow regimes, as obtained from the Kn value.…”
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.