A Comprehensive High-Level Model for CMOS-MEMS Resonators

Banerji, Saoni; Fernandez, Daniel; Madrenas, Jordi

doi:10.1109/jsen.2018.2797526

Cited by 7 publications

(6 citation statements)

References 17 publications

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“…For allowing co-simulation of the sensor and the electronics, a realistic Verilog-A model of the sensor was developed [55]. It precisely mimics all the capacitive effects (including parasitics), the effect of pressure and temperature in the quality factor [56], [57], pull-in [58], voltage nonlinearities [59], Brownian noise [60] and manufacturing mismatch.…”

Section: A Operation Principle and Device Modellingmentioning

confidence: 99%

Monolithic Sensor Integration in CMOS Technologies

Fernandez¹,

Michalik²,

Valle

et al. 2023

IEEE Sensors J.

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Besides being mainstream for mixed-signal electronics, CMOS technology can be used to integrate MEMS on a single die, taking advantage of the structures and materials available in feature sizes around 180 nm. In this article, we demonstrate that the CMOS Back End Of Line (BEOL) layers can be postprocessed and be opportunistically used to create several kinds of MEMS sensors exhibiting good or even excellent performance, such as accelerometers, pressure sensors and magnetometers. Despite the limitations of the available mechanical and material properties in CMOS technology, thanks to monolithic integration, these are compensated by the significant reduction of parasitics and system size. Furthermore, this work opens the path to create monolithic integrated multi-sensor (and even actuator) chips, including data fusion and intelligent processing.

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Section: A Operation Principle and Device Modellingmentioning

confidence: 99%

Monolithic Sensor Integration in CMOS Technologies

Fernandez¹,

Michalik²,

Valle

et al. 2023

IEEE Sensors J.

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“…Based on a structure before studied and tested in [ 10 , 34 ] theoretical graphs of

against pressure sweep at room constant temperature ( Figure 2 a) and against temperature sweep at constant ambient pressure ( Figure 2 b) were made to determinate the regimes of operation, for both pressure and temperature ranges concerning for the prototypes.…”

Section: Design Considerationsmentioning

confidence: 99%

“…The device model to obtain the total energy stored and dissipated and its considerations are taken from [ 34 , 35 ]. There are four resonator springs, which are compacted into a single equivalent constant

for simplicity.…”

Section: Design Considerationsmentioning

confidence: 99%

“…The etching depends on the device dimensions and the oxide over the structure. In the case of the 250 nm technology, the depth is about 13

m, and for the 180 nm node, 9.5

m. Given the different stacks and via thicknesses in the prototypes, it was decided to make a correlation between the necessary release time obtained 250 nm and the theoretical facts involved in it [ 10 , 23 , 34 ].…”

Section: Prototype Designmentioning

confidence: 99%

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Resonant MEMS Pressure Sensor in 180 nm CMOS Technology Obtained by BEOL Isotropic Etching

Mata-Hernandez

Fernandez

Banerji

et al. 2020

Sensors

Self Cite

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This work presents the design and characterization of a resonant CMOS-MEMS pressure sensor manufactured in a standard 180 nm CMOS industry-compatible technology. The device consists of aluminum square plates attached together by means of tungsten vias integrated into the back end of line (BEOL) of the CMOS process. Three prototypes were designed and the structural characteristics were varied, particularly mass and thickness, which are directly related to the resonance frequency, quality factor, and pressure; while the same geometry at the frontal level, as well as the air gap, were maintained to allow structural comparative analysis of the structures. The devices were released through an isotropic wet etching step performed in-house after the CMOS die manufacturing, and characterized in terms of Q-factor vs. pressure, resonant frequency, and drift vs. temperature and biasing voltage.

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“…Nowadays, Micro-Electro-Mechanical-Systems (MEMS) components have been widely used in the field of engineering science, and technology because of their high efficiency, miniature in size, low power consumption, and low cost fabrication [1,2,3,4,5,6,7].…”

Section: Introductionmentioning

confidence: 99%

Concentric Split Aluminum with Silicon-Aluminum Nitride Annular Rings Resonators

Khan

Bao

et al. 2019

Micromachines

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This paper presents a novel approach of annular concentric split rings microelectromechanical resonators with tether configuration to reduce anchor loss and gives very high-quality factor (Q) 2.97 Million based on FEA (Finite Element Analysis) simulation. The operating frequencies of these resonators are 188.55 MHz to 188.62 MHz. When the proposed SR (square rectangle) hole shaped one dimensional phononic crystal (1D PnC), and two dimensional phononic crystal (2D PnC) structure consist of very wide and complete band gaps is applied to novel design rings MEMS resonators, the quality factor (Q) further improved to 19.7 Million and 1750 Million, respectively, by using the finite element method. It is also observed that band gaps become closer by reducing the value of filling fraction, and proposed SR PnC gives extensive peak attenuation. Moreover, harmonic response of ring resonator is verified by the perfect match layers (PML) technique surrounded by resonators with varying width 1.5λ, and 3λ effectively reduce the vibration displacement.

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A Comprehensive High-Level Model for CMOS-MEMS Resonators

Cited by 7 publications

References 17 publications

Monolithic Sensor Integration in CMOS Technologies

Monolithic Sensor Integration in CMOS Technologies

Resonant MEMS Pressure Sensor in 180 nm CMOS Technology Obtained by BEOL Isotropic Etching

Concentric Split Aluminum with Silicon-Aluminum Nitride Annular Rings Resonators

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