Recent progress in building large-scale quantum devices for exploring quantum computing and simulation paradigms has relied upon effective tools for achieving and maintaining good experimental parameters, i.e., tuning up devices. In many cases, including in quantum-dot based architectures, the parameter space grows substantially with the number of qubits, and may become a limit to scalability. Fortunately, machine learning techniques for pattern recognition and image classification using so-called deep neural networks have shown surprising successes for computer-aided understanding of complex systems. In this work, we use deep and convolutional neural networks to characterize states and charge configurations of semiconductor quantum dot arrays when one can only measure a current-voltage characteristic of transport through such a device. For simplicity, we model a semiconductor nanowire connected to leads and capacitively coupled to depletion gates using the Thomas-Fermi approximation and Coulomb blockade physics. We then generate labeled training data for the neural networks, and find at least 90 % accuracy for charge and state identification for single and double dots purely from the dependence of the nanowire's conductance upon gate voltages. Using these characterization networks, we can then optimize the parameter space to achieve a desired configuration of the array, a technique we call 'auto-tuning'. Finally, we show how such techniques can be implemented in an experimental setting by applying our approach to an experimental data set, and outline further problems in this domain, from using charge sensing data to extensions to full one and two-dimensional arrays, that can be tackled with machine learning.
BackgroundOver the past decade, machine learning techniques have revolutionized how research and science are done, from designing new materials and predicting their properties to data mining and analysis to assisting drug discovery to advancing cybersecurity. Recently, we added to this list by showing how a machine learning algorithm (a so-called learner) combined with an optimization routine can assist experimental efforts in the realm of tuning semiconductor quantum dot (QD) devices. Among other applications, semiconductor quantum dots are a candidate system for building quantum computers. In order to employ QDs, one needs to tune the devices into a desirable configuration suitable for quantum computing. While current experiments adjust the control parameters heuristically, such an approach does not scale with the increasing size of the quantum dot arrays required for even near-term quantum computing demonstrations. Establishing a reliable protocol for tuning QD devices that does not rely on the gross-scale heuristics developed by experimentalists is thus of great importance.Materials and methodsTo implement the machine learning-based approach, we constructed a dataset of simulated QD device characteristics, such as the conductance and the charge sensor response versus the applied electrostatic gate voltages. The gate voltages are the experimental ‘knobs’ for tuning the device into useful regimes. Here, we describe the methodology for generating the dataset, as well as its validation in training convolutional neural networks.Results and discussionFrom 200 training sets sampled randomly from the full dataset, we show that the learner’s accuracy in recognizing the state of a device is ≈ 96.5% when using either current-based or charge-sensor-based training. The spread in accuracy over our 200 training sets is 0.5% and 1.8% for current- and charge-sensor-based data, respectively. In addition, we also introduce a tool that enables other researchers to use this approach for further research: QFlow lite—a Python-based mini-software suite that uses the dataset to train neural networks to recognize the state of a device and differentiate between states in experimental data. This work gives the definitive reference for the new dataset that will help enable researchers to use it in their experiments or to develop new machine learning approaches and concepts.
Semiconductor-superconductor hybrid systems provide a promising platform for hosting unpaired Majorana fermions towards the realisation of fault-tolerant topological quantum computing. In this study, we employ the Keldysh Non-Equilibrium Green's function formalism to model quantum transport in normal-superconductor junctions. We analyze III-V semiconductor nanowire Josephson junctions (InAs/Nb) using a three-dimensional discrete lattice model described by the Bogoliubovde Gennes Hamiltonian in the tight-binding approximation, and compute the Andreev bound state spectrum and current-phase relations. Recent experiments [Zuo et al., Phys. Rev. Lett. 119,187704 (2017)] and [Gharavi et al., arXiv:1405.7455v2 (2014] reveal critical current oscillations in these devices, and our simulations confirm these to be an interference effect of the transverse sub-bands in the nanowire. We add disorder to model coherent scattering and study its effect on the critical current oscillations, with an aim to gain a thorough understanding of the experiments. The oscillations in the disordered junction are highly sensitive to the particular realisation of the random disorder potential, and to the gate voltage. A macroscopic current measurement thus gives us information about the microscopic profile of the junction. Finally, we study dephasing in the channel by including elastic phase-breaking interactions. The oscillations thus obtained are in good qualitative agreement with the experimental data, and this signifies the essential role of phase-breaking processes in III-V semiconductor nanowire Josephson junctions. arXiv:1902.10947v3 [cond-mat.mes-hall]
A Josephson junction (JJ) couples the supercurrent flowing between two weakly linked superconductors to the phase difference between them via a current-phase relation (CPR). While a sinusoidal CPR is expected for conventional junctions with insulating weak links, devices made from some exotic materials may give rise to unconventional CPRs and unusual Josephson effects. In this work, we present such a case: we investigate the proximity-induced superconductivity in SnTe nanowires by incorporating them as weak links in JJs and observe a deviation from the standard CPR. We report on indications of an unexpected breaking of time-reversal symmetry in these devices, detailing the unconventional characteristics that reveal this behavior. These include an asymmetric critical current in the DC Josephson effect, a prominent second harmonic in the AC Josephson effect, and a magnetic diffraction pattern with a minimum in critical current at zero magnetic field. The analysis examines how multiband effects and the experimentally visualized ferroelectric domain walls give rise to this behavior, giving insight into the Josephson effect in materials that possess ferroelectricity and/or multiband superconductivity.
The current autotuning approaches for quantum dot (QD) devices, while showing some success, lack an assessment of data reliability. This leads to unexpected failures when noisy or otherwise low quality data is processed by an autonomous system. In this work, we propose a framework for robust autotuning of QD devices that combines a machine learning (ML) state classifier with a data quality control module. The data quality control module acts as a "gatekeeper" system, ensuring that only reliable data is processed by the state classifier. Lower data quality results in either device recalibration or termination. To train both ML systems, we enhance the QD simulation by incorporating synthetic noise typical of QD experiments. We confirm that the inclusion of synthetic noise in the training of the state classifier significantly improves the performance, resulting in an accuracy of 95.0(9) % when tested on experimental data. We then validate the functionality of the data quality control module by showing the state classifier performance deteriorates with decreasing data quality, as expected. Our results establish a robust and flexible ML framework for autonomous tuning of noisy QD devices.
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