Methylammonium lead iodide perovskites are considered direct bandgap semiconductors. Here we show that in fact they present a weakly indirect bandgap 60 meV below the direct bandgap transition. This is a consequence of spin-orbit coupling resulting in Rashba-splitting of the conduction band. The indirect nature of the bandgap explains the apparent contradiction of strong absorption and long charge carrier lifetime. Under hydrostatic pressure from ambient to 325 MPa, Rashba splitting is reduced due to a pressure induced ordering of the crystal structure. The nature of the bandgap becomes increasingly more direct, resulting in five times faster charge carrier recombination, and a doubling of the radiative efficiency. At hydrostatic pressures above 325 MPa, MAPI undergoes a reversible phase transition resulting in a purely direct bandgap semiconductor. The pressure-induced changes suggest epitaxial and synthetic routes to higher efficiency optoelectronic devices

Metallic and dielectric nanostructures have highly tunable resonances that have been used to increase light absorption in a variety of photovoltaic materials and device structures. Metal nanowires have also emerged as a promising candidate for high-performance transparent electrodes for local contacts. In this Letter we propose combining these electrical and optical functions. As a first step, we use rigorous solutions to Maxwell's equations to demonstrate theoretically extreme absorption in semiconductor thin films wrapped around metal nanowires. We show that there are two key principles underlying this extraordinary light trapping effect: (1) maximizing the absorption of each individual resonance by ensuring it is critically coupled and (2) increasing the total number of degenerate resonances. Inserting a metal core into a semiconductor nanowire creates such a degeneracy: polarization-dependent Mie resonances are transformed into polarization-independent Fabry-Pérot-like resonances. We demonstrate that, by reducing the polarization sensitivity and increasing the number of critically coupled modes, this hybrid coaxial nanowire geometry substantially outperforms solid semiconducting nanowires, even though the semiconductor volume is significantly reduced. These results suggest that metal nanowires with semiconductor shells might be ideal building blocks for photovoltaic and solar fuel applications.

Quantum emitters such as the diamond nitrogen-vacancy (NV) center are the basis for a wide range of quantum technologies. However, refraction and reflections at material interfaces impede photon collection, and the emitters’ atomic scale necessitates the use of free space optical measurement setups that prevent packaging of quantum devices. To overcome these limitations, we design and fabricate a metasurface composed of nanoscale diamond pillars that acts as an immersion lens to collect and collimate the emission of an individual NV center. The metalens exhibits a numerical aperture greater than 1.0, enabling efficient fiber-coupling of quantum emitters. This flexible design will lead to the miniaturization of quantum devices in a wide range of host materials and the development of metasurfaces that shape single-photon emission for coupling to optical cavities or route photons based on their quantum state.

Nanophotonic engineering shows great potential for photovoltaics: the record conversion efficiencies of nanowire solar cells are increasing rapidly and the record open-circuit voltages are becoming comparable to the records for planar equivalents. Furthermore, it has been suggested that certain nanophotonic effects can reduce costs and increase efficiencies with respect to planar solar cells. These effects are particularly pronounced in single-nanowire devices, where two out of the three dimensions are subwavelength. Single-nanowire devices thus provide an ideal platform to study how nanophotonics affects photovoltaics. However, for these devices the standard definition of power conversion efficiency no longer applies, because the nanowire can absorb light from an area much larger than its own size. Additionally, the thermodynamic limit on the photovoltage is unknown a priori and may be very different from that of a planar solar cell. This complicates the characterization and optimization of these devices. Here, we analyse an InP single-nanowire solar cell using intrinsic metrics to place its performance on an absolute thermodynamic scale and pinpoint performance loss mechanisms. To determine these metrics we have developed an integrating sphere microscopy set-up that enables simultaneous and spatially resolved quantitative absorption, internal quantum efficiency (IQE) and photoluminescence quantum yield (PLQY) measurements. For our record single-nanowire solar cell, we measure a photocurrent collection efficiency of >90% and an open-circuit voltage of 850 mV, which is 73% of the thermodynamic limit (1.16 V).

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High-index dielectric nanoparticles support leaky geometrical resonances in the visible spectral range with large interaction cross sections, and find applications in nanoscale optoelectronic devices and surface coatings. Coupling between such resonant nanoparticles in close proximity can give rise to enhanced directionality and confinement. Here, we combine dark-field (DF) scattering spectroscopy with cathodoluminescence (CL) imaging spectroscopy to study hybridization of resonant modes in coupled silicon nanoparticles and directly image the modal field profiles of these hybridized eigenmodes. The DF measurements show a strong influence of the gap size on the scattering spectrum as a result of hybridization. Using finite-element modeling we calculate the eigenmodes of the dimer and identify the hybridized eigenmodes in the scattering spectrum. CL imaging spectroscopy is used to directly map the modal field profiles of single particles and dimer structures with deep-subwavelength spatial resolution. Detailed comparison with eigenmode calculations shows that the measured modal field profiles correspond to the hybridized symmetric electric and antisymmetric magnetic bonding modes. We study dimers composed of large dielectric bars to explore the ability of CL imaging to map highly complex hybridized field profiles inside resonant nanostructures. Our results demonstrate the ability to characterize the complex resonant properties of coupled nanostructures, paving the way for more complex applications and devices based on resonant dielectric nanoparticles.

Approaching the theoretically limiting open circuit voltage (V) of solar cells is crucial to optimize their photovoltaic performance. Here, we demonstrate experimentally that nanostructured layers can achieve a fundamentally larger Fermi level splitting, and thus a larger V, than planar layers. By etching tapered nanowires from planar indium phosphide (InP), we directly compare planar and nanophotonic geometries with the exact same material quality. We show that the external radiative efficiency of the nanostructured layer at 1 sun is increased by a factor 14 compared to the planar layer, leading to a 70 mV enhancement in V. The higher voltage arises from both the enhanced outcoupling of photons, which promotes radiative recombination, and the lower active material volume, which reduces bulk recombination. These effects are generic and promise to enhance the efficiency of current record planar solar cells made from other materials as well.

The defect tolerance of halide perovskite materials has led to efficient optoelectronic devices based on thin-film geometries with unprecedented speed. Moreover, it has motivated research on perovskite nanowires because surface recombination continues to be a major obstacle in realizing efficient nanowire devices. Recently, ordered vertical arrays of perovskite nanowires have been realized, which can benefit from nanophotonic design strategies allowing precise control over light propagation, absorption, and emission. An anodized aluminum oxide template is used to confine the crystallization process, either in the solution or in the vapor phase. This approach, however, results in an unavoidable drawback: only nanowires embedded inside the AAO are obtainable, since the AAO cannot be etched selectively. The requirement for a support matrix originates from the intrinsic difficulty of controlling precise placement, sizes, and shapes of free-standing nanostructures during crystallization, especially in solution. Here we introduce a method to fabricate free-standing solution-based vertical nanowires with arbitrary dimensions. Our scheme also utilizes AAO; however, in contrast to embedding the perovskite inside the matrix, we apply a pressure gradient to extrude the solution from the free-standing templates. The exit profile of the template is subsequently translated into the final semiconductor geometry. The free-standing nanowires are single crystalline and show a PLQY up to ∼29%. In principle, this rapid method is not limited to nanowires but can be extended to uniform and ordered high PLQY single crystalline perovskite nanostructures of different shapes and sizes by fabricating additional masking layers or using specifically shaped nanopore endings.