Boosting Solar Cell Photovoltage via Nanophotonic Engineering

Cui, Yifu; Dam, van; Mann, Sander A.; Hoof, van Njj Niels; Veldhoven, van Pj René; Garnett, Erik C.; Bakkers, Epam Erik; Haverkort, Jem Jos

doi:10.1021/acs.nanolett.6b02971

Cited by 57 publications

(55 citation statements)

References 41 publications

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“…A similar strategy involving branched TiO 2 NRs (so-called nano-dendrites or ND) has been demonstrated to achieve modest improvements in the performance of HPSCs through enhancement of light trapping as shown in Figure 14 [152]. Cui et al [153] demonstrated that a nanostructured active layer could achieve a fundamentally larger V oc than planar layers through both increased quasi-Fermi level splitting and enhanced radiative outcoupling efficiencies. …”

Section: Exploitation Of Nanophotonic Effects In 1d-etlsmentioning

confidence: 99%

One-Dimensional Electron Transport Layers for Perovskite Solar Cells

2017

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The electron diffusion length (Ln) is smaller than the hole diffusion length (Lp) in many halide perovskite semiconductors meaning that the use of ordered one-dimensional (1D) structures such as nanowires (NWs) and nanotubes (NTs) as electron transport layers (ETLs) is a promising method of achieving high performance halide perovskite solar cells (HPSCs). ETLs consisting of oriented and aligned NWs and NTs offer the potential not merely for improved directional charge transport but also for the enhanced absorption of incoming light and thermodynamically efficient management of photogenerated carrier populations. The ordered architecture of NW/NT arrays affords superior infiltration of a deposited material making them ideal for use in HPSCs. Photoconversion efficiencies (PCEs) as high as 18% have been demonstrated for HPSCs using 1D ETLs. Despite the advantages of 1D ETLs, there are still challenges that need to be overcome to achieve even higher PCEs, such as better methods to eliminate or passivate surface traps, improved understanding of the hetero-interface and optimization of the morphology (i.e., length, diameter, and spacing of NWs/NTs). This review introduces the general considerations of ETLs for HPSCs, deposition techniques used, and the current research and challenges in the field of 1D ETLs for perovskite solar cells.

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Section: Exploitation Of Nanophotonic Effects In 1d-etlsmentioning

confidence: 99%

One-Dimensional Electron Transport Layers for Perovskite Solar Cells

2017

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“…With their unique structural, optical, and electrical properties, III-V semiconductor nanowires (NWs) have shown great potential for novel nanoscale device applications, such as light-emitting diodes (LEDs), 1 lasers, 2-4 photodetectors, [5][6][7] and solar cells. [8][9][10] In particular, semiconductor NWs are considered to be highly promising for next-generation photovoltaic devices due to (1) their intrinsic antireflection effect for enhancing light absorption, (2) their small footprint efficiently relaxing the lattice-mismatched strain and thus enabling the construction of multijunction cells with optimal band gap combinations as well as the growth on different substrate materials such as silicon and thus potential integration with the existing silicon-based industrial infrastructures, 11,12 and (3) significant cost reduction due to much less material usage.…”

Section: Introductionmentioning

confidence: 99%

Axial p‐n junction design and characterization for InP nanowire array solar cells

Gao

et al. 2018

Progress in Photovoltaics

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In this work, InP nanowire (NW) array solar cells with different axial p‐i‐n junction designs were investigated. The optical properties of the different NW structures were characterized through a series of microphotoluminescence measurements to extract important material parameters such as minority carrier lifetimes and internal quantum efficiencies. A glancing angle sputtering deposition technique has been developed to enable a direct visualization of the p‐n junctions in the vertical array of InP NW solar cells (NWSCs) using electron beam‐induced current (EBIC) technique. Based on EBIC and electrical simulation, it is found that the background doping in NWSC significantly affects the junction position. By modifying the junction design, the width and position of the p‐n junction can be varied effectively. By employing a p‐p−‐n structure, a high junction position (>1 μm from the substrate) and wide depletion width have been achieved as confirmed by EBIC measurement. Moreover, the NW growth substrate does not show any influence on the device behavior due to the fully decoupled junction position, indicating a promising structural design for future development of high‐performance, low‐cost flexible NW devices.

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“…Approaching the theoretical V oc limit of PV cells is therefore crucial to optimizing their performance. It has also been shown that nanostructured devices can achieve a larger Fermi level splitting based on enhanced photon escape probabilities as well as the smaller volume elements . Therefore, a V oc enhancement in devices based on nano‐scale layers may be expected compared to devices based on more standard bulk layers.…”

Section: Introductionmentioning

confidence: 99%

Measurement of strong photon recycling in ultra‐thin GaAs n/p junctions monolithically integrated in high‐photovoltage vertical epitaxial heterostructure architectures with conversion efficiencies exceeding 60%

Proulx

York

Provost

et al. 2016

Physica Rapid Research Ltrs

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Photon‐recycling effects are studied experimentally in photovoltaic power converting III–V semiconductor devices designed with the vertical epitaxial heterostructure architecture (VEHSA). The responsivity of VEHSA structures with multiple thin GaAs n/p junctions is measured for various optical input powers and for different wavelength detuning values with respect to the peak of the spectral response. While the detuning of the optical excitation decreases the external quantum efficiency and the responsivity at low input powers, this study demonstrates that at high optical intensities, a large fraction of the performance can be recovered despite significant detuning values. The photon coupling effects therefore broaden the spectral range for which the VEHSA devices convert high‐power optical inputs with high efficiencies into an electrical output having a preset voltage. The devices exhibit a near optimum responsivity of up to 0.645 A/W for tuned excitation conditions or at high optical intensities for spectral detuning values of up to ∼25 nm and corresponding to an external quantum efficiency of ∼94%. Efficiencies of 62.0% and 61.8% have been obtained for current‐matched excitations and for a detuning of >10 nm, respectively. An output power of 5.87 W is reported and an open circuit voltage enhancement of 92 meV per n/p junction is measured compared to a device with a side by side planar architecture. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

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Boosting Solar Cell Photovoltage via Nanophotonic Engineering

Cited by 57 publications

References 41 publications

One-Dimensional Electron Transport Layers for Perovskite Solar Cells

One-Dimensional Electron Transport Layers for Perovskite Solar Cells

Axial p‐n junction design and characterization for InP nanowire array solar cells

Measurement of strong photon recycling in ultra‐thin GaAs n/p junctions monolithically integrated in high‐photovoltage vertical epitaxial heterostructure architectures with conversion efficiencies exceeding 60%

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