We present a transparent conducting electrode composed of a periodic two-dimensional network of silver nanowires. Networks of Ag nanowires are made with wire diameters of 45-110 nm and a pitch of 500, 700, and 1000 nm. Anomalous optical transmission is observed, with an averaged transmission up to 91% for the best transmitting network and sheet resistances as low as 6.5 Ω/sq for the best conducting network. Our most dilute networks show lower sheet resistance and higher optical transmittance than an 80 nm thick layer of ITO sputtered on glass. By comparing measurements and simulations, we identify four distinct physical phenomena that govern the transmission of light through the networks: all related to the excitation of localized surface plasmons and surface plasmon polaritons on the wires. The insights given in this paper provide the key guidelines for designing high-transmittance and low-resistance nanowire electrodes for optoelectronic devices, including thin-film solar cells. For the latter, we discuss the general design principles to use the nanowire electrodes also as a light trapping scheme.
High-performance integrated optics, solar cells, and sensors require nanoscale optical components at the surface of the device, in order to manipulate, redirect and concentrate light. High-index dielectric resonators provide the possibility to do this efficiently with low absorption losses. The resonances supported by dielectric resonators are both magnetic and electric in nature. Combined scattering from these two can be used for directional scattering. Most applications require strong coupling between the particles and the substrate in order to enhance the absorption in the substrate. However, the coupling with the substrate strongly influences the resonant behavior of the particles. Here, we systematically study the influence of particle geometry and dielectric environment on the resonant behavior of dielectric resonators in the visible to near-IR spectral range. We show the key role of retardation in the excitation of the magnetic dipole (MD) mode, as well as the limit where no MD mode is supported. Furthermore, we study the influence of particle diameter, shape and substrate index on the spectral position, width and overlap of the electric dipole (ED) and MD modes. Also, we show that the ED and MD mode can selectively be enhanced or suppressed using multi-layer substrates. And, by comparing dipole excitation and plane wave excitation, we study the influence of driving field on the scattering properties. Finally, we show that the directional radiation profiles of the ED and MD modes in resonators on a substrate are similar to those of point-dipoles close to a substrate. Altogether, this work is a guideline how to tune magnetic and electric resonances for specific applications.
The conversion of optical power to an electric potential is of general interest for energy applications and is typically obtained via optical excitation of semiconductor materials. We developed a method for achieving electric potential that uses an all-metal geometry based on the plasmon resonance in metal nanostructures. In arrays of gold nanoparticles on an indium tin oxide substrate and arrays of 100-nanometer-diameter holes in 20-nanometer-thick gold films on a glass substrate, we detected negative and positive surface potentials during monochromatic irradiation at wavelengths below or above the plasmon resonance, respectively. We observed plasmoelectric surface potentials as large as 100 millivolts under illumination of 100 milliwatts per square centimeter. Plasmoelectric devices may enable the development of all-metal optoelectronic devices that can convert light into electrical energy.
Doped semiconductors are the most important building elements for modern electronic devices . In silicon-based integrated circuits, facile and controllable fabrication and integration of these materials can be realized without introducing a high-resistance interface. Besides, the emergence of two-dimensional (2D) materials enables the realization of atomically thin integrated circuits. However, the 2D nature of these materials precludes the use of traditional ion implantation techniques for carrier doping and further hinders device development . Here, we demonstrate a solvent-based intercalation method to achieve p-type, n-type and degenerately doped semiconductors in the same parent material at the atomically thin limit. In contrast to naturally grown n-type S-vacancy SnS, Cu intercalated bilayer SnS obtained by this technique displays a hole field-effect mobility of ~40 cm Vs, and the obtained Co-SnS exhibits a metal-like behaviour with sheet resistance comparable to that of few-layer graphene . Combining this intercalation technique with lithography, an atomically seamless p-n-metal junction could be further realized with precise size and spatial control, which makes in-plane heterostructures practically applicable for integrated devices and other 2D materials. Therefore, the presented intercalation method can open a new avenue connecting the previously disparate worlds of integrated circuits and atomically thin materials.
Plasmonic nanostructures have been recently investigated as a possible way to improve absorption of light in solar cells. The strong interaction of small metal nanostructures with light allows control over the propagation of light at the nanoscale and thus the design of ultrathin solar cells in which light is trapped in the active layer and efficiently absorbed. In this paper we review some of our recent work in the field of plasmonics for improved solar cells. We have investigated two possible ways of integrating metal nanoparticles in a solar cell. First, a layer of Ag nanoparticles that improves the standard antireflection coating used for crystalline and amorphous silicon solar cells has been designed and fabricated. Second, regular and random arrays of metal nanostructures have been designed to couple light in waveguide modes of thin semiconductor layers. Using a large-scale, relative inexpensive nano-imprint technique, we have designed a back-contact light trapping surface for a-Si:H solar cells which show enhanced efficiency over standard randomly textured cells.
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