Recent studies on the magneto-transport properties of topological insulators (TI) 1-7 have attracted great attention due to the rich spin-orbit physics and promising applications in spintronic devices. Particularly the strongly spinmoment coupled electronic states have been extensively pursued to realize efficient spin-orbit torque (SOT) switching. However, so far current-induced magnetic switching with TI has only been observed at cryogenic temperatures. It remains a controversial issue whether the topologically protected electronic states in TI could benefit spintronic applications at room temperature. In this work, we report full SOT switching in a TI/ferromagnet bilayer heterostructure with perpendicular magnetic anisotropy at room temperature. The low switching current density provides a definitive proof on the high SOT efficiency from TI. The effective spin Hall angle of TI is determined to be several times larger than commonly used heavy metals. Our results demonstrate the robustness of TI as an SOT switching material and provide a direct avenue towards applicable TI-based spintronic devices.Spin-orbit coupling has been extensively studied for the conversion between charge current and spin current 8 . When neighbored with a ferromagnet (FM), non-equilibrium spins induced by the spin-orbit coupling can exert torques onto magnetic moments (Fig.

Owing to the difficulty in detecting and manipulating the magnetic states of antiferromagnetic materials, studying their switching dynamics using electrical methods remains a challenging task. By employing heavy-metal-rare-earth-transition-metal alloy bilayers, we experimentally study current-induced domain wall dynamics in an antiferromagnetically coupled system. We show that the current-induced domain wall mobility reaches a maximum at the angular momentum compensation point. With experiment and modeling, we further reveal the internal structures of domain walls and the underlying mechanisms for their fast motion. We show that the chirality of the ferrimagnetic domain walls remains the same across the compensation points, suggesting that spin orientations of specific sublattices rather than net magnetization determine Dzyaloshinskii-Moriya interaction in heavy-metal-ferrimagnet bilayers. The high current-induced domain wall mobility and the robust domain wall chirality in compensated ferrimagnetic material opens new opportunities for high-speed spintronic devices.

The successful implementation of spin-wave devices requires efficient modulation of spin-wave propagation. Using cobalt/nickel multilayer films, we experimentally demonstrate that nanometer-wide magnetic domain walls can be applied to manipulate the phase and magnitude of coherent spin waves in a nonvolatile manner. We further show that a spin wave can, in turn, be used to change the position of magnetic domain walls by means of the spin-transfer torque effect generated from magnon spin current. This mutual interaction between spin waves and magnetic domain walls opens up the possibility of realizing all-magnon spintronic devices, in which one spin-wave signal can be used to control others by reconfiguring magnetic domain structures.

Spintronic computing promises superior energy efficiency and nonvolatility compared to conventional field-effect transistor logic. But, it has proven difficult to realize spintronic circuits with a versatile, scalable device design that is adaptable to emerging material physics. Here we present prototypes of a logic device that encode information in the position of a magnetic domain wall in a ferromagnetic wire. We show that a single three-terminal device can perform inverter and buffer operations. We demonstrate one device can drive two subsequent gates and logic propagation in a circuit of three inverters. This prototype demonstration shows that magnetic domain wall logic devices have the necessary characteristics for future computing, including nonlinearity, gain, cascadability, and room temperature operation.

Magnetic domain walls are information tokens in both logic and memory devices, and hold particular interest in applications such as neuromorphic accelerators that combine logic in memory. Here, we show that devices based on the electrical manipulation of magnetic domain walls are capable of implementing linear, as well as programmable nonlinear, functions. Unlike other approaches, domain-wall-based devices are ideal for application to both synaptic weight generators and thresholding in deep neural networks. Prototype micrometer-size devices operate with 8 ns current pulses and the energy consumption required for weight modulation is ≤ 16 pJ. Both speed and energy consumption compare favorably to other synaptic nonvolatile devices, with the expected energy dissipation for scaled 20-nm-devices close to that of biological neurons. Deep neural networks 1, 2 mimic the synaptic and activation functionality of human neurons using repeated applications of linear filters interspersed by nonlinear decision functions. Among other applications, deep neural networks offer promising solutions to image 3 , speech 4 and video 5recognition. Training is performed using a backpropagation learning procedure 6 , with the filter weights updated continuously like synapses, until the calculated output matches the desired output.

Two-dimensional (2D) π-conjugated metal–organic frameworks (πMOFs) are a new class of designer electronic materials that are porous and tunable through the constituent organic molecules and choice of metal ions. Unlike typical MOFs, 2D πMOFs exhibit high conductivity mediated by delocalized π-electrons and have promising applications in a range of electrical devices as well as exotic physical properties. Here, we develop a growth method that generates single-crystal plates with lateral dimensions exceeding 10 μm, orders of magnitude bigger than previous methods. Synthesis of large single crystals eliminates a significant impediment to the fundamental characterization of the materials, allowing determination of the intrinsic conductivity and mobility along the 2D plane of πMOFs. A representative 2D πMOF, Ni-CAT-1, exhibits a conductivity of up to 2 S/cm, and Hall measurement reveals the origin of the high conductivity. Characterization of crystalline 2D πMOFs creates the foundation for developing electronic applications of this promising and highly diverse class of materials.

Antiferromagnet materials have recently gained renewed interest due to their possible use in spintronics technologies, where spin transport is the foundation of their functionalities. In that respect metallic antiferromagnets are of particular interest, since they enable complex interplays between electronic charge transport, spin, optical, and magnetization dynamics. Here we review phenomena where the metallic conductivity provides unique perspectives for the practical use and fundamental properties of antiferromagnetic materials. II. CHARGE TRANSPORT IN METALLIC ANTIFERROMAGNETS A. MagnetoresistanceAnisotropic magnetoresistance (AMR) is a long-studied electrical property of ferromagnetic metals where resistivity depends upon the relative orientation between current and magnetization. 13 In spintronics research involving ferromag-arXiv:2005.05247v1 [cond-mat.str-el] 11 May 2020 state (see Fig. 1). In the Fe 2 O 3 /Pt bilayer system, intentional thermal annealing of the sample was used to distinguish two distinct types of switching in the magnetoresistance. A sawtooth magnetoresistance shape was attributed to the thermal artifact, while a smaller amplitude step-like change in the resistance was identified as antiferromagnetic switching. The implications of these new SMR switching experiments have not been fully reconciled yet with the earlier AMR switching experiments. Clearly, a future goal in the field of antiferromagnetic spintronics will be to identify and separate magnetoresistance effects arising from thermal or electromigration artifacts in both SMR and AMR based systems and devices.

The formation of 360°magnetic domain walls (360DWs) in Co and Ni 80 Fe 20 thin film wires was demonstrated experimentally for different wire widths, by successively injecting two 180°domain walls (180DWs) into the wire. For narrow wires (50 nm wide for Co), edge roughness prevented the combination of the 180DWs into a 360DW, and for wide wires (200 nm for Co) the 360DW was unstable and annihilated spontaneously, but over an intermediate range of wire widths, reproducible 360DW formation occurred. The annihilation and dissociation of 360DWs was demonstrated by applying a magnetic field parallel to the wire, showing that annihilation fields were several times higher than dissociation fields in agreement with micromagnetic modeling. The annihilation of a 360DW by current pulsing was demonstrated.