Abstract:The successful implementation of spin-wave devices requires efficient modulation of spin-wave propagation. Using cobalt/nickel multilayer films, we experimentally demonstrate that nanometer-wide magnetic domain walls can be applied to manipulate the phase and magnitude of coherent spin waves in a nonvolatile manner. We further show that a spin wave can, in turn, be used to change the position of magnetic domain walls by means of the spin-transfer torque effect generated from magnon spin current. This mutual in… Show more
“…Similar phenomenon has been predicted in FM [49] and AFM [50]. The interplay between spin wave and DW [51][52][53][54][55] can then be explored to optimize the racetrack memory.…”
Section: Device Structure and Thz Spin-wave Generationsupporting
201210Terahertz (THz) signals, mainly generated by photonic or electronic approaches, are being sought for various applications, whereas the development of magnetic source might be a necessary step to harness the magnetic nature of electromagnetic radiation. We show that the relativistic effect on the current-driven domain-wall motion induces THz spin-wave emission in ferrimagnets. The required current density increases dramatically in materials with strong exchange interaction and rapidly exceeds 10 12 A m -2 , leading to the device breakdown and thus the lack of experimental evidence. By translating the collective magnetization oscillations into voltage signals, we propose a three-terminal device for the electrical detection of THz spin wave. Through material engineering, wide frequency range from 264 GHz to 1.1 THz and uniform continuous signals with improved output power can be obtained. As a reverse effect, the spin wave generated in this system is able to move ferrimagnetic domain wall. Our work provides guidelines for the experimental verification of THz spin wave, and could stimulate the design of THz spintronic oscillators for wideband applications as well as the all-magnon spintronic devices.
“…Similar phenomenon has been predicted in FM [49] and AFM [50]. The interplay between spin wave and DW [51][52][53][54][55] can then be explored to optimize the racetrack memory.…”
Section: Device Structure and Thz Spin-wave Generationsupporting
201210Terahertz (THz) signals, mainly generated by photonic or electronic approaches, are being sought for various applications, whereas the development of magnetic source might be a necessary step to harness the magnetic nature of electromagnetic radiation. We show that the relativistic effect on the current-driven domain-wall motion induces THz spin-wave emission in ferrimagnets. The required current density increases dramatically in materials with strong exchange interaction and rapidly exceeds 10 12 A m -2 , leading to the device breakdown and thus the lack of experimental evidence. By translating the collective magnetization oscillations into voltage signals, we propose a three-terminal device for the electrical detection of THz spin wave. Through material engineering, wide frequency range from 264 GHz to 1.1 THz and uniform continuous signals with improved output power can be obtained. As a reverse effect, the spin wave generated in this system is able to move ferrimagnetic domain wall. Our work provides guidelines for the experimental verification of THz spin wave, and could stimulate the design of THz spintronic oscillators for wideband applications as well as the all-magnon spintronic devices.
“…Note that the giant amplitude of inverse and direct Rashba-Edelstein effect in oxide heterostructures of SrTiO 3 and LaAlO 3 /SrTiO 3 formed quasi 2D electron gas (2DEG) system also provide significant charge-spin interconversions ( Noël et al., 2020 ), holding the promise to pave the way from oxide spin-orbitronics prospect toward low-power electrical control of magnetizations. In addition, the frontier researches on spin-orbitronics could inspire innovations in other spintronic devices, e.g., the newly reported optical spin-orbit torque (OSOT) devices with an optical means for magnetization manipulation in FM layer ( Choi et al., 2020 ), and the magnonic devices where significant discoveries in the detection and the manipulation (see Figure 6 D) of magnetization via spin waves have been recently presented ( Han et al., 2019 ; Wang et al., 2019b ; Liu et al., 2019a ). Figure 6 Representative Reprinted Works Reported on Spin-Orbitronics in Exotic Magnetic Materials beyond the Ferromagnets (A) Electric switching of antiferromagnet.…”
Section: The Future Opportunitiesmentioning
confidence: 99%
“… (D) Magnetic domain wall motions as well as magnetization switching induced by the torques mediated by spin waves (magnons), the phase and magnitude of which can also be tuned by the domain walls mutually in a nonvolatile manner ( Han et al., 2019 ; Wang et al., 2019b ). …”
Summary
Science, engineering, and medicine ultimately demand fast information processing with ultra-low power consumption. The recently developed spin-orbit torque (SOT)-induced magnetization switching paradigm has been fueling opportunities for spin-orbitronic devices, i.e., enabling SOT memory and logic devices at sub-nano second and sub-picojoule regimes. Importantly, spin-orbitronic devices are intrinsic of nonvolatility, anti-radiation, unlimited endurance, excellent stability, and CMOS compatibility, toward emerging applications, e.g., processing in-memory, neuromorphic computing, probabilistic computing, and 3D magnetic random access memory. Nevertheless, the cutting-edge SOT-based devices and application remain at a premature stage owing to the lack of scalable methodology on the field-free SOT switching. Moreover, spin-orbitronics poises as an interdisciplinary field to be driven by goals of both fundamental discoveries and application innovations, to open fascinating new paths for basic research and new line of technologies. In this perspective, the specific challenges and opportunities are summarized to exert momentum on both research and eventual applications of spin-orbitronic devices.
“…In addition to the electrical methods, using domain walls to control the phase and amplitude of spin waves is another important modulation method (Han et al, 2019). Figure 10A is the experimental setup, Figures 10B,C are the magneto-optical Kerr effect (MOKE) images of the devices, in which the bright and dark colors represent the domains with up and down magnetization.…”
Section: Functional Spin-wave Devices Information Processing Devicesmentioning
With the continuous miniaturization of electronic devices and the increasing speed of their operation, solving a series of technical issues caused by high power consumption has reached an unprecedented level of difficulty. Fortunately, magnons (the quanta of spin waves), which are the collective precession of spins in quantum magnetic materials, making it possible to replace the role of electrons in modern information applications. In the process of information transmission, nano-sized spin-wave devices do not transport any physical particles; therefore, the corresponding power consumption is extremely low. This review focuses on the emerging developments of the spin-wave materials, tunable effects, and functional devices applications. In the materials front, we summarize the magnetic properties and preparation characteristics of typical insulating single-crystalline garnet films or metallic alloy films, the development of new spin-wave material system is also introduced. Afterward, we introduce the emerging electric control of spin-wave effects originating from the interface transitions, physical or chemical, among these films including, voltage-controlled magnetic anisotropy, magneto-ionic transport, electric spin-torque, and magnon-torque. In the functional devices front, we summarize and elaborate on the low dispassion information processing devices and sensors that are realized based on spin waves.
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