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The successful implementation of spin-wave devices requires efficient modulation of spin-wave propagation. Using cobalt/nickel multilayer films, we experimentally demonstrate that nanometer-wide magnetic domain walls can be applied to manipulate the phase and magnitude of coherent spin waves in a nonvolatile manner. We further show that a spin wave can, in turn, be used to change the position of magnetic domain walls by means of the spin-transfer torque effect generated from magnon spin current. This mutual interaction between spin waves and magnetic domain walls opens up the possibility of realizing all-magnon spintronic devices, in which one spin-wave signal can be used to control others by reconfiguring magnetic domain structures.

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Unidirectional magnetoresistance (UMR) has been observed in a variety of stacks with ferromagnetic/spin Hall material bilayer structures. In this work, UMR in antiferromagnetic insulator Fe2O3/Pt structure is reported. The UMR has a negative value, which is related to interfacial Rashba coupling and band splitting. Thickness‐dependent measurement reveals a potential competition between UMR and the unidirectional spin Hall magnetoresistance (USMR). This work reveals the existence of UMR in antiferromagnetic insulators/heavy metal bilayers and broadens the way for the application of antiferromagnet‐based spintronic devices.