No abstract

No abstract

No abstract

In the day to day life in the present world where we are using vast technology, power is the most important term to deal for any Digital system to work, so it is as important to calculate the power we are consuming for our needs as anything over may drain one, so to know the power consumed from anywhere here we are dealing with smart energy meter using LoRa-WAN and IoT Applications, LoRa stands for Long Range, the name itself states that it deals with long range communication with the low power consumption working on batteries for years, In the IoT applications the range of the communication is the most important factor, as in IoT most of the Wi-Fi based systems needs to have many access points to cover the large area hence there is increment in the expenses for the system to integrate, by adding the unit of LoRa to the described design we can enhance the system to long range to several locations within that prescribed range as a LoRa can handle many nodes, the main theme of the LoRa is to promote the Bi-directional communication, all the data collected is stored in the Gateway and sent to the cloud server where you can access the data from anywhere through the mobile phone or PC and device, by installing the demanding version of software on your Gadget. AS we can see that in our real time we are using 4G network where transmitted bits or more, in the concept of LoRa the transmitted bits or less, by which we can overcome the disadvantage of the 4G/GSM networks, as of now as there is a huge loss to the telecommunication industries due to this they are switching to the LoRa.

A direct method for calculating local vibrational mode (LVM) frequencies from defect complexes in zinc blende structure Semiconductors is discussed.Interatomic interactions are described hy an extension of the Keating model. Sets of force constants for eleven pure host crystals, including homopolar and Ill-V semiconductors, are found by fitting to available phonon dispersion relations. Simulations of isolated impurities in Ill-V hosts are reported and, from these, some trends are deduced for the changes in force constants needed for reproduction of experimental measurements. The use of the method in the interpretation of experimental results from defect complexes is illustrated by detailed calculations of (i) isotopic fine structures of the CA, line and CA.and (ii) line patterns associated with carbon in AI,Ga, _.As. lines in GaAs

No abstract

No abstract

No abstract