Optimization of dot layer periodicity through analysis of strain and electronic profile in vertically stacked InAs/GaAs Quantum dot heterostructure

Panda, Debiprasad; Saha, Jhuma; Balgarkashi, Akshay; Shetty, Saikalash; Rawool, Harshal; Singh, Sukhwinder; Upadhyay, S.; Tongbram, Binita; Chakrabarti, Subhananda

doi:10.1016/j.jallcom.2017.11.086

Cited by 12 publications

(2 citation statements)

References 27 publications

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“…The self-assembled InAs quantum dots (QDs) grown by the Stranski-Krastanov (SK) growth mode have indeed demonstrated excellent properties and have found applications in various optoelectronic devices [7][8][9][10][11]. The SK growth mode offers several advantages such that contribute to the desirable characteristics of these QDs [12][13][14]. We have used the GaAsSb as a capping material over InAs QDs.…”

Section: I: Introductionmentioning

confidence: 99%

Investigation of strain profile and band-alignment study in InAs/GaAsSb quantum dot heterostructure with varying Sb content

Ahmed Sabiha,

Kumar,

Gourishetty

et al. 2023

Infrared Sensors, Devices, and Applications XIII

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The current work represents the influence of Sb composition on strain profiles, band alignment of InAs/GaAsSb Stranski-Krastanov (SK) quantum dots (QD) heterostructure. A single layer InAs/GaAs SK QD heterostructure has been utilised as a reference structure (sample A). Three different structures B, C and D are chosen with the Sb composition of 10%, 14% and 22% in the capping layer on the InAs QDs. The strain distribution of InAs quantum dots with GaAs1-xSbx capping has been investigated in detail by using Nextnano simulation software. The transition from type-I to type-II band alignment occurs after 14% Sb incorporation. The effect of variation in the Sb component on the strain profile is analysed in terms of hydrostatic and biaxial strain. In the strain profiles, the biaxial strain increases significantly from samples A to D, whereas the hydrostatic strain is reducing from samples A to D inside the QD region simultaneously. Further, low temperature photoluminescence (PL) has been performed to validate the simulated results. The PL peak is originated at ~1030 nm for sample A, which shows a good agreement with the simulated value ~1071 nm. With the similar dot size, the simulated PL peaks are found at 1116, 1284, 1675 nm for samples B, C and D, respectively. A slight variation is observed in the experimentally obtained PL peaks and simulated one due to the incorporation of higher Sb content. With the higher Sb content, relatively more defects are generated, which affects the experimental PL peaks. Also, a red shift is found in the PL peaks from ~1030 nm to ~1213 nm at 19K and it gives an insight to develop various optoelectronic devices using such QDs heterostructure.

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Section: I: Introductionmentioning

confidence: 99%

Investigation of strain profile and band-alignment study in InAs/GaAsSb quantum dot heterostructure with varying Sb content

Ahmed Sabiha,

Kumar,

Gourishetty

et al. 2023

Infrared Sensors, Devices, and Applications XIII

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“…An effective way to improve PD performance is to combine photosensitive materials with other materials to construct layer heterostructures . Bilayer QD heterostructures offer a low dark-current density, appreciable responsivity, and satisfying spectral response, which can be useful for photoelectric devices. , Combinations of two dissimilar materials to form heterostructures have been widely demonstrated . Tretyakov et al reported a Ag 2 S QD/Si heterostructure short-wave infrared photodetector.…”

Section: Introductionmentioning

confidence: 99%

High-Responsivity Vis–NIR Photodetector Based on a Ag₂S/CsPbBr₃ Heterojunction

Wang

Zhang

Song

et al. 2022

ACS Appl. Electron. Mater.

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Quantum dots (QDs) have gained significant interest in optoelectronic devices due to their excellent properties. Single-QD materials limit the high performance of photodetectors (PDs). The performance of PDs is enhanced by combining two dissimilar materials to form a heterostructure. The high responsivity vis−NIR photodetector based on a Ag 2 S/CsPbBr 3 heterojunction is presented in this work. Using CsPbBr 3 QDs as the first absorption layer and Ag 2 S QDs as the second absorption layer, a bipolar carrier transporting channel was built. This layered arrangement can absorb light most effectively. The formation of a heterojunction promoted charge transfer and reduced the recombination of carriers, thus improving the performance of devices. The responsivity (R) is 11.3 A/W, and the specific detectivity (D*) is 3.55 × 10 10 Jones for the Ag 2 S/CsPbBr 3 PD under 405 nm irradiation. Meanwhile, the Ag 2 S/CsPbBr 3 heterojunction can absorb 350−1040 nm light, indicating that the device has a wide spectral detection capability (vis−NIR). The response time of the PD is 31/34 ms under 532 nm irradiation. This work provides a feasible way for high responsivity and zerodimensional heterojunction photodetectors.

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In0.5Ga0.5As Bilayer Quantum Dot Heterostructure for mid-infrared photodetection

Panda

Balgarkashi

Singh

et al. 2018

Infrared Physics & Technology

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Optimization of dot layer periodicity through analysis of strain and electronic profile in vertically stacked InAs/GaAs Quantum dot heterostructure

Cited by 12 publications

References 27 publications

Investigation of strain profile and band-alignment study in InAs/GaAsSb quantum dot heterostructure with varying Sb content

Investigation of strain profile and band-alignment study in InAs/GaAsSb quantum dot heterostructure with varying Sb content

High-Responsivity Vis–NIR Photodetector Based on a Ag₂S/CsPbBr₃ Heterojunction

In0.5Ga0.5As Bilayer Quantum Dot Heterostructure for mid-infrared photodetection

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Optimization of dot layer periodicity through analysis of strain and electronic profile in vertically stacked InAs/GaAs Quantum dot heterostructure

Cited by 12 publications

References 27 publications

Investigation of strain profile and band-alignment study in InAs/GaAsSb quantum dot heterostructure with varying Sb content

Investigation of strain profile and band-alignment study in InAs/GaAsSb quantum dot heterostructure with varying Sb content

High-Responsivity Vis–NIR Photodetector Based on a Ag2S/CsPbBr3 Heterojunction

In0.5Ga0.5As Bilayer Quantum Dot Heterostructure for mid-infrared photodetection

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High-Responsivity Vis–NIR Photodetector Based on a Ag₂S/CsPbBr₃ Heterojunction