2018
DOI: 10.1016/j.infrared.2018.09.028
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In0.5Ga0.5As Bilayer Quantum Dot Heterostructure for mid-infrared photodetection

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“…Therefore, by generating different wide band gaps, the absorption and emission wavelengths of QD are tunable. So, the property of scale-dependent emission wavelength for QD is widely applied in various technologies such as optical display [27], laser amplification [28], emission [29], and photodetector [30]. Therefore, the feature of strong carrier confinement in semiconductor QD structure will play a very important role in laser device.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, by generating different wide band gaps, the absorption and emission wavelengths of QD are tunable. So, the property of scale-dependent emission wavelength for QD is widely applied in various technologies such as optical display [27], laser amplification [28], emission [29], and photodetector [30]. Therefore, the feature of strong carrier confinement in semiconductor QD structure will play a very important role in laser device.…”
Section: Introductionmentioning
confidence: 99%