Effects of high energy proton implantation on the optical and electrical properties of In(Ga)as/GaAs QD heterostructures with variations in the capping layer

Upadhyay, S.; Mandal, Ajay; Ghadi, Hemant; Pal, Debjit; Basu, Arindam; Agarwal, Akshay; Subrahmanyam, N.B.V.; Singh, P.; Chakrabarti, Subhananda

doi:10.1016/j.jlumin.2015.01.002

Cited by 6 publications

(5 citation statements)

References 27 publications

(45 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…There are reports on the interaction of protons with as-grown defects that provides energy to dislocated atoms, causing them to occupy respective lattice positions in and around the QDs. 27) The lowest PL intensity is observed in sample C at irradiation of 4 × 10 12 protons=cm 2 . This is due to the formation of complex defects specific to multiple displacement events, point defects such as As and Ga vacancies, interstitials, antisites or their complex with other defects in and around the QD interface at a higher irradiation fluence.…”

Section: Intermediate Band Excitation 321 Comparison Of Photoluminesc...mentioning

confidence: 91%

“…This is due to the formation of complex defects specific to multiple displacement events, point defects such as As and Ga vacancies, interstitials, antisites or their complex with other defects in and around the QD interface at a higher irradiation fluence. 23,27) The PL intensity of sample A is between those of samples B and C. and C, respectively. The quenching of I N from unity implies the existence of a pair of NRR centers inside the QDs and=or at the QDs=GaAs interface.…”

Section: Intermediate Band Excitation 321 Comparison Of Photoluminesc...mentioning

confidence: 99%

See 1 more Smart Citation

Characterization of nonradiative recombination centers in proton-irradiated InAs/GaAs quantum dots by two-wavelength-excited photoluminescence

Haque

Kamata

Sato

et al. 2018

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Nonradiative recombination (NRR) centers in as-grown and proton-irradiated InAs/GaAs quantum dot (QD) structures have been studied by two-wavelength-excited photoluminescence (PL). The PL intensity quenching of GaAs and QD emissions due to the addition of a below-gap excitation light of 0.80 eV energy indicates the presence of defect levels acting as NRR centers. The method enables us to discuss the distribution of NRR centers in GaAs and/or InAs QD regions by selecting either conduction band excitation (2.33 eV) or intermediate band excitation (1.27 eV). We have found that the densities of NRR centers in GaAs layers and the effect of quenching on GaAs emissions increase monotonically with increasing proton irradiation fluence. The QD emission intensity, however, increases at a moderate fluence of 7 × 1011 protons/cm2 owing to the defect-assisted trapping of electrons into QDs. Further incorporation of NRR centers after 4 × 1012 protons/cm2 fluence quenches the QD-PL intensity below that of an unirradiated sample.

show abstract

Section: Intermediate Band Excitation 321 Comparison Of Photoluminesc...mentioning

confidence: 91%

Section: Intermediate Band Excitation 321 Comparison Of Photoluminesc...mentioning

confidence: 99%

Characterization of nonradiative recombination centers in proton-irradiated InAs/GaAs quantum dots by two-wavelength-excited photoluminescence

Haque

Kamata

Sato

et al. 2018

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…Because of the high perspectives in the development of high-speed optoelectronics, all the synthesis methods are aimed at obtaining materials with certain characteristics. Nowadays, there are three main features of semiconductor heterostructures: transport [6,7], optical [7,8] and photocatalytic [9][10][11].…”

Section: Description Of the Object And Methods Of Researchmentioning

confidence: 99%

The Influence of Technological Factors on Photoconverters Electrophysical Characteristics

Никонова¹,

Nebesniuk²,

Nikonova³

2020

J. Nano- Electron. Phys.

View full text Add to dashboard Cite

Solar energy represents a sensible alternative to the use of thermal, chemical and nuclear power sources. Solar radiation can satisfy the growing needs of humanity with its energetic resources. Nowadays the actual problem is the development and production of highly effective and economical photoconverters (PCs). Thus, we need new technologies and materials. Due to their high efficiency, temperature stability, and low sensitivity to radiation exposure, heterostructure-based PCs are the most promising for the use. In the article, the technology of PC production on the base of silicon structures with ITO/n-Si/n +-Si heterojunctions is proposed. Preparation of these layers by spraying method on the surface of silicon plates is based on the results of the determination of the optimal values of heating temperature, deposition rate, velocity of gas flow from the spray nozzle, ITO layer thickness, concentration of InCl3 to SnCl4 in alcohol solution, and other factors. The technological peculiarities of producing these layers by spraying method and their influence on PC electrophysical characteristics, operational reliability and efficiency are revealed.

show abstract

“…QDs are a class of semiconductor nanocrystals with photocatalytic [ 120 , 121 ], photoelectric conversion [ 122 ], and electrical properties [ 123 ], which possess wide-spread applications. Currently, there are two main synthetic methods for the synthesis of QDs: (1) vapor-phase epitaxial growth method and (2) liquid-phase method [ 124 ]. The vapor-phase epitaxial growth requires complex synthesis and it is also difficult to isolate QDs from the substrate [ 125 ].…”

Section: Progress Of Microfluidic Technology In the Synthesis Of Imentioning

confidence: 99%

Synthesis and Surface Engineering of Inorganic Nanomaterials Based on Microfluidic Technology

Shen

Shafiq

et al. 2020

Nanomaterials

View full text Add to dashboard Cite

The controlled synthesis and surface engineering of inorganic nanomaterials hold great promise for the design of functional nanoparticles for a variety of applications, such as drug delivery, bioimaging, biosensing, and catalysis. However, owing to the inadequate and unstable mass/heat transfer, conventional bulk synthesis methods often result in the poor uniformity of nanoparticles, in terms of microstructure, morphology, and physicochemical properties. Microfluidic technologies with advantageous features, such as precise fluid control and rapid microscale mixing, have gathered the widespread attention of the research community for the fabrication and engineering of nanomaterials, which effectively overcome the aforementioned shortcomings of conventional bench methods. This review summarizes the latest research progress in the microfluidic fabrication of different types of inorganic nanomaterials, including silica, metal, metal oxides, metal organic frameworks, and quantum dots. In addition, the surface modification strategies of nonporous and porous inorganic nanoparticles based on microfluidic method are also introduced. We also provide the readers with an insight on the red blocks and prospects of microfluidic approaches, for designing the next generation of inorganic nanomaterials.

show abstract

Effects of high energy proton implantation on the optical and electrical properties of In(Ga)as/GaAs QD heterostructures with variations in the capping layer

Cited by 6 publications

References 27 publications

Characterization of nonradiative recombination centers in proton-irradiated InAs/GaAs quantum dots by two-wavelength-excited photoluminescence

Characterization of nonradiative recombination centers in proton-irradiated InAs/GaAs quantum dots by two-wavelength-excited photoluminescence

The Influence of Technological Factors on Photoconverters Electrophysical Characteristics

Synthesis and Surface Engineering of Inorganic Nanomaterials Based on Microfluidic Technology

Contact Info

Product

Resources

About