Characterization of nonradiative recombination centers in proton-irradiated InAs/GaAs quantum dots by two-wavelength-excited photoluminescence

Haque, Md. Dulal; Kamata, Norihiko; Sato, Shin-ichiro; Hubbard, Seth M.

doi:10.7567/jjap.57.092302

Cited by 4 publications

(2 citation statements)

References 36 publications

(73 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The reason for this phenomenon may be that the defects produced inside the material after irradiation of GaAs with lighter mass protons are point defects. Point defects may not have a significant impact on the structural properties of GaAs, but the point defects generated with increasing fluence introduce deep energy level defects in the band gap of GaAs, thus forming a non-radiative composite center that captures excitons for luminescence, which results in a large change in luminescence properties and a small impact on its structure [40].…”

Section: Pl Results and Discussionmentioning

confidence: 99%

Structural and optical changes in GaAs irradiated with 100 keV and 2 MeV protons

Liu¹,

Ning²,

Zhang³

et al. 2022

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

To clarify the proton energy dependence of proton irradiation damage in GaAs materials, intrinsic and Si-doped GaAs were irradiated with 100 keV and 2 MeV protons at different fluences. The evolution of lattice defects and optical properties of GaAs were analyzed by Raman spectroscopy, XRD spectroscopy, and photoluminescence spectroscopy. The results of Raman and XRD results show that the structures of the intrinsic GaAs and Si-doped GaAs does not change much after proton irradiation, which exhibits excellent radiation resistance. At the same time, the Raman results also prove that the radiation resistance of structural stability of Si-doped GaAs is lower than that of the intrinsic GaAs. However, in contrast to the structural properties, the optical properties of intrinsic GaAs degrade severely after irradiation in the PL spectrum, indicating that the optical properties of Si-doped GaAs are more stable than intrinsic GaAs. This is due to the changes of the light-emitting mechanism for Si-doped GaAs. In addition, the Raman and PL results also confirm that the damage produced by protons at 100 keV is greater than 2 MeV, which is consistent with the SRIM simulation.

show abstract

Section: Pl Results and Discussionmentioning

confidence: 99%

Structural and optical changes in GaAs irradiated with 100 keV and 2 MeV protons

Liu¹,

Ning²,

Zhang³

et al. 2022

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…In gold-hyperdoped silicon, a wide range of process induced defects were determined using deep level transient spectroscopy (DLTS), primarily in the substrate region [12]. In addition to DLTS, photoluminescence (PL) measurements are commonly used to determine trap states in semiconductors [27,28], but being a weak emitter, PL is not suitable for analyzing traps states in silicon. THz photoconductivity measurements directly probes how charge carrier lifetime is influenced by the introduction of the gold-dopants and trap states.…”

Section: Effect Of Ion Energy and Dosementioning

confidence: 99%

Impact of ion implantation and laser processing parameters on carrier lifetimes in gold-hyperdoped silicon

Dissanayake

Chow

Lim

et al. 2023

Semicond. Sci. Technol.

View full text Add to dashboard Cite

In recent years, infrared photodetectors using silicon hyperdoped with deep-level dopants started to demonstrate extended light detection beyond the silicon’s absorption edge. The reported responsivities or external quantum efficiencies, however, are typically low. Focusing on gold-hyperdoped silicon and using time-resolved terahertz spectroscopy, a non-contact photoconductivity measurement, we investigated how hyperdoping parameters affect charge carrier lifetimes. Correlating the observed lifetime characteristics with dopant distribution profiles, we identify factors that impact carrier lifetime most significantly. Specifically, the charge carrier lifetime reduces with increasing gold concentrations, increasing ion implantation energies, and increasing pulsed-laser melting fluences. Both ion implantation energy and laser fluence affect the dopant incorporation depths. The total gold dose implanted and laser fluence affect the carrier distribution profile, particularly the concentration spike toward the surface. Oxide passivation and the number of laser pulses do not impact the carrier lifetime significantly. Our findings benefit future device developments.

show abstract

Spectroscopy of Nonradiative Recombination Levels by Two‐Wavelength Excited Photoluminescence

Kamata

2020

Physica Status Solidi (b)

Self Cite

View full text Add to dashboard Cite

The intensity of photoluminescence (PL) changes when an additional below‐gap excitation (BGE) light modifies the electronic occupation of one of the crystalline defects acting as nonradiative recombination (NRR) levels and shifts the balance between radiative and NRR rates. The photon energy of above‐gap excitation (AGE) light selects the layer and determines the depth of inspection, whereas that of BGE corresponds to the energy distribution of the NRR levels. The essential advantage of two‐wavelength excited PL (TWEPL) lies on a systematic combination of BGE spectroscopy and AGE spectroscopy for a variety of materials. It provides the noncontacting and nondestructive detection of NRR levels, distributing in a whole wafer as well as in a microscopic volume. Density and the electron and hole capture rates of NRR level 1, Nt1, Cn1, and Cp1, and those of level 2, Nt2 and Cp2, are determined consistently by the TWEPL measurement with the aid of time‐resolved PL. A brief review is given on the principle of the TWEPL, basic model of analysis, and experimental results of detecting NRR levels in GaAs/AlGaAs, InGaAs/GaAs, InAs/GaAs, GaN, InGaN, AlGaN, and GaPN. The method gives us a guiding compass toward the efficiency improvement of electronic devices from which PL is observable.

show abstract

Characterization of nonradiative recombination centers in proton-irradiated InAs/GaAs quantum dots by two-wavelength-excited photoluminescence

Cited by 4 publications

References 36 publications

Structural and optical changes in GaAs irradiated with 100 keV and 2 MeV protons

Structural and optical changes in GaAs irradiated with 100 keV and 2 MeV protons

Impact of ion implantation and laser processing parameters on carrier lifetimes in gold-hyperdoped silicon

Spectroscopy of Nonradiative Recombination Levels by Two‐Wavelength Excited Photoluminescence

Contact Info

Product

Resources

About