It is well established that defects strongly influence properties in two-dimensional materials. For graphene, atomic defects activate the Raman-active centrosymmetric A1g ring-breathing mode known as the D-peak. The relative intensity of this D-peak compared to the G-band peak is the most widely accepted measure of the quality of graphene films. However, no such metric exists for monolayer semiconducting transition metal dichalcogenides such as WS2 or MoS2. Here we intentionally create atomic-scale defects in the hexagonal lattice of pristine WS2 and MoS2 monolayers using plasma treatments and study the evolution of their Raman and photoluminescence spectra. High-resolution transmission electron microscopy confirms plasma-induced creation of atomic-scale point defects in the monolayer sheets. We find that while the Raman spectra of semiconducting transition metal dichalcogenides (at 532 nm excitation) are insensitive to defects, their photoluminescence reveals a distinct defect-related spectral feature located ∼0.1 eV below the neutral free A-exciton peak. This peak originates from defect-bound neutral excitons and intensifies as the two-dimensional (2D) sheet is made more defective. This spectral feature is observable in air under ambient conditions (room temperature and atmospheric pressure), which allows for a relatively simple way to determine the defectiveness of 2D semiconducting nanosheets. Controlled defect creation could also enable tailoring of the optical properties of these materials in optoelectronic device applications.

Manipulating interfacial thermal transport is important for many technologies including nanoelectronics, solid-state lighting, energy generation and nanocomposites. Here, we demonstrate the use of a strongly bonding organic nanomolecular monolayer (NML) at model metal/dielectric interfaces to obtain up to a fourfold increase in the interfacial thermal conductance, to values as high as 430 MW m(-2) K(-1) in the copper-silica system. We also show that the approach of using an NML can be implemented to tune the interfacial thermal conductance in other materials systems. Molecular dynamics simulations indicate that the remarkable enhancement we observe is due to strong NML-dielectric and NML-metal bonds that facilitate efficient heat transfer through the NML. Our results underscore the importance of interfacial bond strength as a means to describe and control interfacial thermal transport in a variety of materials systems.

The recent interest and excitement in graphene has also opened up a pandora's box of other two-dimensional (2D) materials and material combinations which are now beginning to come to the fore. One family of these emerging 2D materials is transition metal dichalcogenides (TMDs). So far there is very limited understanding on the wetting behavior of "monolayer" TMD materials. In this study, we synthesized large-area, continuous monolayer tungsten disulfide (WS2) and molybdenum disulfide (MoS2) films on SiO2/Si substrates by the thermal reduction and sulfurization of WO3 and MO3 thin films. The monolayer TMD films displayed an advancing water contact angle of ∼83° as compared to ∼90° for the bulk material. We also prepared bilayer and trilayer WS2 films and studied the transition of the water contact angle with increasing number of layers. The advancing water contact angle increased to ∼85° for the bilayer and then to ∼90° for the trilayer film. Beyond three layers, there was no significant change in the measured water contact angle. This type of wetting transition indicates that water interacts to some extent with the underlying silica substrate through the monolayer TMD sheet. The experimentally observed wetting transition with numbers of TMD layers lies in-between the predictions of one continuum model that considers only van der Waals attractions and another model that considers only dipole-dipole interactions. We also explored wetting as a function of aging. A clean single-layer WS2 film (without airborne contaminants) was shown to be strongly hydrophilic with an advancing water contact angle of ∼70°. However, over time, the sample ages as hydrocarbons and water present in air adsorb onto the clean WS2 sheet. After ∼7 days, the aging process is completed and the advancing water contact angle of the aged single-layer WS2 film stabilizes at ∼83°. These results suggest that clean (i.e., nonaged) monolayer TMDs are hydrophilic materials. We further show that substitution of sulfur atoms by oxygen in the lattice of aged monolayer WS2 and MoS2 films can be used to generate well-defined 'hydrophobic-hydrophilic' patterns that preferentially accumulate and create microdrop arrays on the surface during water condensation and evaporation experiments.

The performance of graphene field-effect transistors is limited by the drastically reduced carrier mobility of graphene on silicon dioxide (SiO2) substrates. Here we demonstrate an ultrasensitive ultraviolet (UV) phototransistor featuring an organic self-assembled monolayer (SAM) sandwiched between an inorganic ZnO quantum dots decorated graphene channel and a conventional SiO2/Si substrate. Remarkably, the room-temperature mobility of the chemical-vapor-deposition grown graphene channel on the SAM is an order-of-magnitude higher than on SiO2, thereby drastically reducing electron transit-time in the channel. The resulting recirculation of electrons (in the graphene channel) within the lifetime of the photogenerated holes (in the ZnO) increases the photoresponsivity and gain of the transistor to ∼10(8) A/W and ∼3 × 10(9), respectively with a UV to visible rejection ratio of ∼10(3). Our UV photodetector device manufacturing is also compatible with current semiconductor processing, and suitable for large volume production.

Emerging two-dimensional (2D) materials such as transition metal dichalcogenides offer unique and hitherto unavailable opportunities to tailor the mechanical, thermal, electronic, and optical properties of polymer nanocomposites. In this study, we exfoliated bulk molybdenum disulfide (MoS2) into nanoplatelets, which were then dispersed in epoxy polymers at loading fractions of up to 1% by weight. We characterized the tensile and fracture properties of the composite and show that MoS2 nanoplatelets are highly effective at enhancing the mechanical properties of the epoxy at very low nanofiller loading fractions (below 0.2% by weight). Our results show the potential of 2D sheets of transition metal dichalcogenides as reinforcing additives in polymeric composites. Unlike graphene, transition metal dichalcogenides such as MoS2 are high band gap semiconductors and do not impart significant electrical conductivity to the epoxy matrix. For many applications, it is essential to enhance mechanical properties while also maintaining the electrical insulation properties and the high dielectric constant of the polymer material. In such applications, conductive carbon based fillers such as graphene cannot be utilized. This study demonstrates that 2D transition metal dichalcogenide additives offer an elegant solution to such class of problems.