MBE-grown InGaAs/GaAs quantum-dots on Ge substrate: An idea towards optoelectronic integration on silicon

Simulation of 0.67 eV-InGaAs solar cell with InP window-layers of various thickness on virtual InP/AlGaInAs/GaAs substrates

“…Recently, A metamorphic Al 0.18 Ga 0.33 In 0.49 P/Al 0.23 Ga 0.77 As/Ga-As/Ga 0.66 In 0.34 As/Ga 0.42 In 0.58 As 6-junction solar cell by NREL [13] have demonstrated AM1.5 143-suns efficiencies in exceed of 47.1%, The 6-J solar cell is proposed to match the solar spectrum and balance the photocurrent generated from each subcell, of which Ga 0.66 In 0.34 As and Ga 0.42 In 0.58 As subcells are lattice-mismatched to GaAs substrate. The flexibility of the bandgap energy changes and the growth of InGaAs on various substrates, such as Si [14], Ge [15], GaAs [16] and InP [17], makes the material very attractive for various devices. Therefore, the investigation of metamorphic InGaAs solar cell on GaAs substrate is much necessary and important.…”