The formation of junctions in silicon through the use of mono‐energetic ions in the energy range from 1 to 2.5 Mev has been studied. Boron, nitrogen, and phosphorous ions were used. Results are presented on the annealing temperatures required to place these ions in substitutional states and on the distribution of these ions in the host material. A way for localized masking against the ion beam, to obtain planar structures, is also discussed.
We describe the operation and performance of two Schottky IRCCD staring sensors. Both sensors are monolithic and are fabricated from conventional integrated circuit grade silicon. The devices include a 256 element linear array and a 25X50 element area array of PtSi Schottky photodiodes which are sensitive from 1.1 to 4.6 pm.The 1250 element mosaic incorporates an interline transfer architecture. Signal readout for both devices is via a 4 -phase buried channel CCD network and an on -chip amplifier. The focal plane may be operated between 20 °K and 100 °K; optimum performance is observed between 50 °K and 90 °K. We present examples of human thermal imaging against ambient backgrounds as well as photoresponse, thermal transfer, and resolution characteristics.Measured results are compared to theoretical predictions of performance and future developments for this class of sensor are projected.1.
500Pt /p -Si diode reacted at 320 °C is shown in Figure 2, where we plot Yhv vs hv.From the graph we find a oarrier height of 0.268 eV and a Cl of 3.6 % /eV.It should be noted, however, that the form of the yield curve (Fig. 2) and the value of Cl (3 < Cl < 11 % /eV) are highly dependent on reaction conditions and initial Pt layer thickness.Effects such as electron -phonon mean free paths and enhanced thin film reflections can influence the energy dependence of the photoresponse.
AbstractWe describe the operation and performance of two Schottky IRCCD staring sensors. Both sensors are monolithic and are fabricated from conventional integrated circuit grade silicon. The devices include a 256 element linear array and a 25X50 element area array of PtSi Schottky photodiodes which are sensitive from 1.1 to 4.6 ym. The 1250 element mosaic incorporates an interline transfer architecture. Signal readout for both devices is via a 4-phase buried channel CCD network and an on-chip amplifier. The focal plane may be operated between 20°K and 100°K; optimum performance is observed between 50°K and 90°K. We present examples of human thermal imaging against ambient backgrounds as well as photoresponse, thermal transfer, and resolution characteristics. Measured results are compared to theoretical predictions of performance and future developments for this class of sensor are projected.
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