Isochronal annealing studies have been conducted on implanted boron and phosphorus layers in silicon. It is shown that the sheet conductance rise on annealing is dependent on the temperature at which the silicon is maintained during implantation. From the standpoint of conductance, low-temperature implanting is to be favored.
Limitations on high level doping have been investigated for implanted Zn in GaAs. Fast diffusive redistribution during the annealing of heavy dose Zn implants generally leads to broader doped layers of lesser concentrations. Though such a redistribution can be prevented by short duration annealing of ∼1 s, this alone is not sufficient to increase the peak concentration. Significantly better activation can be obtained if an excess of As is also provided. It is found that coimplanting As with Zn in addition to short duration annealing provides layers with peak doping concentrations increased to levels approaching 1020 cm−3. Doping enhancement related to encapsulation and the outdiffusion of Ga into SiO2 has also been observed.
A technique is described that combines controlled anodic oxidation with differential Hall data to obtain electrical carrier concentration profiles of ion-implanted indium phosphide. Reproducible oxide layers are grown using a citric acid, ethylene glycol electrolyte bath and a controlled voltage rise technique. A variation in mP material consumption with anodic oxide thickness and with anodizing technique is observed. For the purposes of demonstration, silicon and sulfur species implanted at 1 MeV to fluences of 3 • 1014 cm -2 are examined. These profiles are measured on <100> implanted semiinsulating InP. The technique could be adapted to measure other alloys in the InGaAsP system. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 163.118.172.206 Downloaded on 2015-07-02 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 163.118.172.206 Downloaded on 2015-07-02 to IP
Factor important in attaining higher n‐type conductivity on implanting
normalGaAs
have been investigated. These are reflected in a comparison of Group IV and VI dopants where the difference in behavior can be ascribed to the different sublattice occupation. The importance of Ga outdiffusion with
SiO2
encapsulated layers is seen on incorporating Ga within the oxide prior to initiating any heat‐treatment. For sulfur, the electrical activity is doubled by the presence of the oxide gallium. Such an oxide is detrimental for implanted Si+layers and indicates that some Ga outdiffusion is desirable. Presumably the same applies and inadvertently occurs with the traditionally simpler p‐type implants. The annealing of S+ and Se+ implants with a dose‐dependent, optimum annealing temperature differs significantly from Si+ which requires higher annealing for comparable doping. The advantage gained by implanting Group VI dopants at elevated temperatures is not as pronounced with Si and in this respect Si resembles the p‐type dopant Zn which does not exhibit any strong dependence on implantation temperature.
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