The formation of junctions in silicon through the use of mono‐energetic ions in the energy range from 1 to 2.5 Mev has been studied. Boron, nitrogen, and phosphorous ions were used. Results are presented on the annealing temperatures required to place these ions in substitutional states and on the distribution of these ions in the host material. A way for localized masking against the ion beam, to obtain planar structures, is also discussed.
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