No abstract

We have measured depth-resolved microphotoluminescence ͑PL͒ and micro-Raman spectra on the cross section of porous silicon multilayers to sample different layer depths. The PL emission band gets stronger, blueshifts, and narrows at the high porosity layers. On the contrary, the Raman band weakens and broadens. This band is fitted to the phonon confinement model. With the bulk silicon phonon frequency and its linewidth as free parameters, we obtain crystallite size, temperature, and stress as a function of depth. Sizes are larger than those estimated from PL. Laser power was reduced to eliminate heating effects. Compressive stresses in excess of 10 kbar are found in the deepest layer due to the lattice mismatch with the substrate.

We have studied the stress in porous silicon films as a function of depth and porosity using micro-Raman spectroscopy. Raman spectra were measured at different points along a cross section cleaved normal to the layer planes. Each spectrum was fitted using the phonon confinement model with the bulk phonon wavenumber as a free parameter. From the variation of this parameter we get the stress using the known dependence of phonon frequency on stress for bulk silicon. We observe a compressive stress at the interface with the substrate due to the lattice mismatch between porous and bulk silicon. The maximum value of the stress increases with porosity. The results obtained by Raman micro-spectroscopy agree well with the lattice mismatch measured by X-ray diffraction reported in the literature.

No abstract

No abstract

We have measured the temperature rise in nanoporous silicon under strong illumination. A green laser beam was focused with a microscope objective on porous silicon films with porosities between 55% and 80%. The Raman spectrum was measured for power densities between 0.8 and 65 kW/cm 2 . We obtained the temperature of the illuminated area from the shift of the phonon frequency when phonon confinement effects are removed. The temperature depends linearly on power density. For a given power density, the temperature increases with porosity for porosities below 60% as the thermal conductivity decreases. Beyond that point, the temperature decreases because the reduction of light absorption dominates. The maximum temperature reached was 400 C for a 60% porosity sample and for a power density of 65 kW/cm 2 .

Las propiedades fotoluminiscentes y electroluminiscentes en el visible del silicio poroso hacen de éste un material muy interesante para el desarrollo de disposotivos optoelectrónicos. Para la obtención de dispositivos de calidad es necesario reducir la semianchura del espectro de luminiscencia del silicio poroso, típicamente de unos 100 nm, para conseguir una emisión monocromática. Esto puede conseguirse formando sobre la capa luminiscente una estructura multicapa, también de silicio poroso, que actúe a modo de filtro interferencial. Así se consigue estrechar el rango de emisión cuanto se desee, sencillamente diseñando el filtro de manera conveniente. En este artículo se estudian las propiedades ópticas de las capas de silicio poroso para el posterior diseño de estos filtros. Palabras clave: silicio poroso, multicapa, filtro interferencial, dispositivos optoelectrónicos, propiedades ópticas Development of interference filters for porous silicon based photoluminescent devicesPorous silicon's photoluminescent and electroluminescent properties make it a very interesting material for the development of optoelectronic devices. To obtain high quality devices it is mandatory to narrowen the porous silicon luminescent spectrum, tipically about 100 nm wide. This can be obtained by forming a porous silicon multilayer structure on the luminescent layer that acts as an interference filter. Thus, the emission spectrum can be narrowed as much as wished by simply designing the filter in the appropriate way. In this article, the optical properties of porous silicon layers are studied for future filter design.

No abstract