Compositional study of LiNbO3 thin films grown by liquid phase epitaxy

Enhancement in crystalline quality of LiNbO3 films by slow annealing at low temperatures

“…Among the variety of methods for producing epitaxial films, viz. sol-gel process, sputtering, metal organic chemical vapor deposition, molecular beam epitaxy [5][6][7][8], the pulsed laser deposition (PLD) can yield crack-free, dense films with stoichiometry corresponding to that of the target material [9,10]. However, epitaxial growth of LN films with PLD is still a challenge due to the appearance of secondary phases, such as the Li-deficient phase and the Li-rich phase [11,12].…”

Influence of substrate temperature on the growth and optical waveguide properties of oriented LiNbO3 thin films

“…Up to now, numerous techniques have been used to deposit LiNbO 3 thin films, including sputtering [2,3], liquid-phase epitaxy (LPE) [4], sol-gel process [5,6], metal organic chemical vapor deposition (MOCVD) [7,8] and pulsed laser deposition (PLD) [9][10][11][12][13]. Among these techniques, PLD has been shown to be very appropriate for the complex oxide films deposition due to its intrinsic feature of easily transferring the target stoichiometry to the substrate.…”

Comparison of LiNbO3flux systems for deposition on RIE-etched LiTaO3substrates

“…The flux was heated at 180 • C h −1 to a homogenization stage (950 • C for LiVO 3 -LiNbO 3 , 1000 • C for LiBO 2 -LiNbO 3 ) for 12 h. The solution was then cooled at a rate of 25 • C h −1 to 50 • C above the growth temperature, then at 12 • C h −1 for the remainder. The saturation temperatures T sat , defined as the point where neither dissolution nor crystallization occurs, were determined as 950 • C [13] for LiBO 2 -LiNbO 3 and 870 • C for LiVO 3 -LiNbO 3 [17,18]. Solution temperatures used for growth were 855-865 • C and 935-945 • C for the vanadium-based and boron-based systems respectively.…”