A GaInAsP/InP multilayer reflector was fabricated by low pressure metalorganic chemical vapor deposition. Peak reflectivity of as high as 0.98 was obtained, which was in good agreement with the calculated value. This multilayer reflector was applied to a 1.5 µm GaInAsP/InP vertical cavity surface emitting laser diode, and room temperature pulsed oscillation was achieved for the first time with a threshold current density of 124 kA/cm2.
1.3 pm GalnAsP/lnP GRIN SCH MQW laser diodes grown by low-pressure MOCVD were operated without mode hopping in a single longitudinal mode over a wide temperature range AT (5-45 "C). The temperature coefficient of the wavelength in this range was 0.8 A deg", which was as small as that of the distributed feedback laser. At the extremes of this temperature range mode hopping occurred. The wavelength did not shift into the nearest neighbouring mode but into one which was separated by several mode spacings. An interference between the fundamental and higher-order transverse modes might be the underlying mechanism.
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