Sharp interfaces in GaInAsP/InP single quantum wells grown by MOVPE

Irikawa, M.; Murgatroyd, I. J.; Ijichi, T.; Matsumoto, N.; Nakai, Akiyoshi; Kashiwa, S.

doi:10.1016/0022-0248(88)90555-6

Journal of Crystal Growth

1988

DOI: 10.1016/0022-0248(88)90555-6

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Sharp interfaces in GaInAsP/InP single quantum wells grown by MOVPE

M. Irikawa¹,

I. J. Murgatroyd²,

T. Ijichi³

et al.

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Cited by 8 publications

(1 citation statement)

References 12 publications

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“…Growth interruption is generally utilized as an effective method to improve the interface quality in OMVPE and molecular beam epitaxy ͑MBE͒ growth of III-V heterostructures. 14,15 In the growth of ͑AlP͒ n /͑GaP͒ n superlattices with nу4, we have used an interruption time of 3 s till now. 3 However, the 3 s interruption time is not the optimized value, but only a value estimated from the gas exchange time for our reactor.…”

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confidence: 99%

Organometallic vapor phase epitaxial growth of AlP/GaP monolayer superlattice using tertiarybutylphosphine

Wang

Wakahara

Sasaki

1994

Applied Physics Letters

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The growth interruption time in the organometallic vapor phase epitaxial growth of AlP/GaP layers using tertiarybutylphosphine is optimized for the realization of an AlP/GaP monolayer superlattice. In the growth interruption, there exists an optimum time (2 s) beyond which the full width at half-maximum (FWHM) of the x-ray diffraction satellite peaks of an (AlP)5/GaP)5 superlattice becomes broader. The monolayer (AlP)1/(GaP)1 superlattice is realized for the first time in a AlP/GaP system. An average heterointerface roughness of as small as 0.12 Å is estimated from the FHWM of the (001) diffraction peak of the (AlP)1/(GaP)1 superlattice.

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mentioning

confidence: 99%

Organometallic vapor phase epitaxial growth of AlP/GaP monolayer superlattice using tertiarybutylphosphine

Wang

Wakahara

Sasaki

1994

Applied Physics Letters

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Effect of growth interruption on the interface flatness in metalorganic vapor phase epitaxy-grown GaAs/GaAsP heterostructures

Ota

Yaguchi

Onabe

et al. 1994

Journal of Crystal Growth

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Third-order NLO properties of the DMF solutions of 3-D network and 2-D layered organic–metal polymers with (4, 4) grid units

Chang

Meng

et al. 2005

Inorganica Chimica Acta

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Sharp interfaces in GaInAsP/InP single quantum wells grown by MOVPE

Cited by 8 publications

References 12 publications

Organometallic vapor phase epitaxial growth of AlP/GaP monolayer superlattice using tertiarybutylphosphine

Organometallic vapor phase epitaxial growth of AlP/GaP monolayer superlattice using tertiarybutylphosphine

Effect of growth interruption on the interface flatness in metalorganic vapor phase epitaxy-grown GaAs/GaAsP heterostructures

Third-order NLO properties of the DMF solutions of 3-D network and 2-D layered organic–metal polymers with (4, 4) grid units

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