We report on the metalorganic chemical vapor deposition (MOCVD) growth of InAsyPl1−y/InP strained layer quantum wells and the successful lasing of novel InAsyP1−y/InP strained layer quantum well laser diodes at 1.3 μm for the first time. Full width at half maximum of room temperature photoluminescence was as narrow as 30.1 meV with a peak wavelength of 1.29 μm. A very low threshold current density of 0.45 kA/cm2 was obtained on broad contact lasers with a cavity length of 900 μm.
A GaInAsP/InP multilayer reflector was fabricated by low pressure metalorganic chemical vapor deposition. Peak reflectivity of as high as 0.98 was obtained, which was in good agreement with the calculated value. This multilayer reflector was applied to a 1.5 µm GaInAsP/InP vertical cavity surface emitting laser diode, and room temperature pulsed oscillation was achieved for the first time with a threshold current density of 124 kA/cm2.
We have fabricated a high quantum efficiency (40%/facet), low internal loss (5 cm-1), high output power (62 mW/facet) 1.3 µm GaInAsP buried graded-index separate-confinement-heterostructure multiple quantum well (GRIN-SCH-MQW) laser diode entirely grown by metalorganic chemical vapor deposition (MOCVD). This laser diode operated in a single longitudinal mode in a relatively wide temperature range of 35°C without any mode hopping. The minimum spectral linewidth of 2.3 MHz was realized at an output power of 7 mW for a laser diode with cavity length of 900 µm. The beam divergence angle is considerably smaller than that of the conventional DH laser diodes.
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