1.5 µm GaInAs/GaInAsP graded index separate confinement heterostructure multiple quantum well (GRINSCH-MQW) laser diodes grown by metalorganic chemical vapour deposition (MOCVD)

Kasukawa, A.; Murgatroyd, I. J.; Imajo, Y.; Namegaya, T.; Okamoto, Hiroshi; Kashiwa, S.

doi:10.1049/el:19890446

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1.5 µm GaInAs/GaInAsP graded index separate confinement heterostructure multiple quantum well (GRINSCH-MQW) laser diodes grown by metalorganic chemical vapour deposition (MOCVD)

Cited by 19 publications

References 0 publications

Basic Concept of Semiconductor Laser Diodes

Basic Concept of Semiconductor Laser Diodes

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