Optoelectronic devices by GSMBE

The effect of the growth temperature on the quality of InP grown by chemical beam epitaxy (CBE) using ethyldimethylindium (EDMIn) and bisphosphinoethane (BPE) are presented. The growth rate was nearly independent of growth temperature, BPE flow rate, and cracker cell temperature in the range from 700 to 900~ Smooth and mirror-like surfaces were obtained for all of the samples grown at temperatures above 465~ All of the InP samples were n-type. As the growth temperature increased, the net carrier concentration decreased and reached a minimum value of 3.2 • 10 ~ cm -3 at 485~ The electron mobility increased with increasing growth temperature, reaching values of 3630 and 21800 cm2/Vs at 300 and 77K, respectively. The photoluminescence was found to depend strongly on the growth temperature. Excitonic luminescence was detected only for growth temperatures above 465~ The intensity of the band edge emission is comparable to that of the acceptor related emission for layers grown at 465~ At 485~ the band-edge recombination is dominant and the acceptor related emission is barely observable. As the growth temperature increased from 465 to 485~ the full width at half maximum of the bound exciton peak decreased from 6.8 to 3.5 meV at 14K. This trend was consistent with the decrease in the impurity concentration deduced from the Hall effect measurements.

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Current status review and future prospects of CBE, MOMBE and GSMBE

Tsang

1991

Journal of Crystal Growth

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Optoelectronic devices by GSMBE

Cited by 13 publications

References 3 publications

Advanced Epitaxial Techniques for III-V Materials

Advanced Epitaxial Techniques for III-V Materials

Chemical beam epitaxial growth of inp using EDMIn and BPE

Current status review and future prospects of CBE, MOMBE and GSMBE

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