Current status review and future prospects of CBE, MOMBE and GSMBE

Tsang, W. T.

doi:10.1016/0022-0248(91)90588-v

Cited by 15 publications

(1 citation statement)

References 26 publications

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“…In chemical beam epitaxy (CBE), where gas sourcessuch as metalorganic compounds and hydrides -are used as precursors [5], silane and disilane are the typical gases employed for Si doping. The use of these precursors makes it possible to achieve electron concentrations in GaAs of up to 1-5×10 18 cm −3 [6,7].…”

Section: Introductionmentioning

confidence: 99%

H$_{2}$-diluted precursors for GaAs doping in chemical beam epitaxy

Saddik,

Braña,

López

et al. 2021

Preprint

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A wide range of n-and p-type doping levels in GaAs layers grown by chemical beam epitaxy is achieved using H 2 -diluted DTBSi and CBr 4 as gas precursors for Si and C. We show that the doping level can be varied by modifying either the concentration or the flux of the diluted precursor. Specifically, we demonstrate carrier concentrations of 6 × 10 17 -1.2 × 10 19 cm −3 for Si, and 9 × 10 16 -3.7 × 10 20 cm −3 for C, as determined by Hall effect measurements. The incorporation of Si and C as a function of the flux of the corresponding diluted precursor is found to follow, respectively, a first and a fourth order power law. The dependence of the electron and hole mobility values on the carrier concentration as well as the analysis of the layers by low-temperature (12 K) photoluminescence spectroscopy indicate that the use of H 2 for diluting DTBSi or CBr 4 has no effect on the electrical and optical properties of GaAs.

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Section: Introductionmentioning

confidence: 99%

H$_{2}$-diluted precursors for GaAs doping in chemical beam epitaxy

Saddik,

Braña,

López

et al. 2021

Preprint

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Chemie und Kristallzüchtung

Hulliger

1994

Angewandte Chemie

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Chemistry and Crystal Growth

Hulliger¹

1994

Angew. Chem. Int. Ed. Engl.

188

103

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Single-crystal materials, along with other forms of condensed matter (ceramics, polymers, liquid crystals, etc.) are fundamental to modern technology. The basic research and production of new materials with "tailored" solid-state physical properties therefore necessitate not only chemical synthesis but also the production of single crystals of a particular morphology (either bulk or thin layer crystals) and well-defined crystal defects (doping). In this review, an attempt is made to broaden the traditional synthetic concept of chemistry to the process of single-crystal synthesis. The methods of the resulting approach, which takes into account the specific properties of solid materials, are discussed and illustrated by experimental set-ups for the solution of a range of problems in chemical crystallization. Also included is recent work on the growing of single crystals of high-temperature superconductors, organic nonlinear optical compounds, and proteins.

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Current status review and future prospects of CBE, MOMBE and GSMBE

Cited by 15 publications

References 26 publications

H$_{2}$-diluted precursors for GaAs doping in chemical beam epitaxy

H$_{2}$-diluted precursors for GaAs doping in chemical beam epitaxy

Chemie und Kristallzüchtung

Chemistry and Crystal Growth

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