Long wavelength GRIN-SCH MQW lasers incorporating graded GaAlInAs confinement layers

Thompson, J. Will; Ash, R.M.; Maung, N.; Moseley, A.J.; Robbins, David J.

doi:10.1007/bf02651296

Cited by 6 publications

(1 citation statement)

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“…Q UARTERNARY alloys such as GaAlInAs and InGaAsP lattice-matched to InP have been widely used in photonic devices for semiconductor lasers [1], [2] emitting at 1550 nm or 1310 nm. Currently, InP has been the most prevailing substrate for homo-or pseudomorphic epitaxy of photonic devices as 'zero' defect is the convention wisdom for high performance.…”

Section: Inalgaas/inalas Mqws On Si Substrate I Introductionmentioning

confidence: 99%

InAlGaAs/InAlAs MQWs on Si Substrate

Shi

Wan

et al. 2015

IEEE Photon. Technol. Lett.

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Abstract-We report the growth and characterization of InAlGaAs/InAlAs multiquantum wells (MQWs) emitting at ∼1310-nm grown on silicon by organometallic vapor phase epitaxy. Compared with the same structure grown on a reference planar InP substrate, photoluminescence of the MQWs on Si shows both comparable line widths and internal quantum efficiencies at room temperature. A specially engineered InP buffer with interlayers on a nanopatterned silicon substrate was used. Cross-sectional transmission electron microscopy reveals effective dislocation filtering by the three strained InGaAs interlayers. The high-quality quantum-well structure grown on the InP-on-Si template suggests great potential of integrating III-V photonic devices on the Si platform.Index Terms-InAlGaAs/InAlAs multi-quantum wells, organometallic vapor phase epitaxy, photoluminescence, InP-on-Si.

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Section: Inalgaas/inalas Mqws On Si Substrate I Introductionmentioning

confidence: 99%