We develop algorithms for obtaining regularized estimates of emission means in positron emission tomography. The first algorithm iteratively minimizes a penalized maximum-likelihood (PML) objective function. It is based on standard de-coupled surrogate functions for the ML objective function and de-coupled surrogate functions for a certain class of penalty functions. As desired, the PML algorithm guarantees nonnegative estimates and monotonically decreases the PML objective function with increasing iterations. The second algorithm is based on an iteration dependent, de-coupled penalty function that introduces smoothing while preserving edges. For the purpose of making comparisons, the MLEM algorithm and a penalized weighted least-squares algorithm were implemented. In experiments using synthetic data and real phantom data, it was found that, for a fixed level of background noise, the contrast in the images produced by the proposed algorithms was the most accurate.
We found that m-plane GaN grown on m-plane sapphire nucleates in ambidirections at the initial growth stage, which seriously degrades the surface morphology and the crystallinity of m-GaN films. To avoid the ambidirectional islanding of m-plane GaN, off-cut m-plane sapphire (toward to the [112¯0] direction) substrates were introduced. When the off-angle was small as 1°–2°, the surface step determined the epitaxial orientation of m-GaN islands. Hence, an m-GaN film with a smooth surface and a low-dislocation density was obtained. However, the dislocation component of m-GaN film was increased with increasing of the off angle due to step bunches.
This article will report the epitaxial growth of high-quality p-type ZnO layers on Zn-face ZnO substrates by nitrogen and tellurium (N+Te) codoping. ZnO:[N+Te] films show p-type conductivity with a hole concentration of 4 Â 10 16 cm À3 , while ZnO:N shows n-type conduction. The photoluminescence of ZnO:N shows broad bound exciton emission lines. Meanwhile, ZnO:[N+Te] layers show dominant A 0 X emission line at 3.359 eV, with a linewidth as narrow as 1.2 meV. Its X-ray linewidth shows narrower line width of 30 arcsec. Detailed investigation of photoluminescence properties of (N+Te) codoped ZnO layers suggest that the binding energy of N acceptors lies in a range of 121-157 meV. #
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