High-Quality p-Type ZnO Films Grown by Co-Doping of N and Te on Zn-Face ZnO Substrates

Park, Seunghwan; Minegishi, Tsutomu; Oh, D. C.; Lee, Hyunjae; Taishi, Toshinori; Park, Jinsub; Jung, Mina; Chang, Jiho; Im, Il; Ha, Jun‐Seok; Hong, Soon–Ku; Yonenaga, Ichiro; Chikyow, Toyohiro; Yao, Takafumi

doi:10.1143/apex.3.031103

Cited by 32 publications

(18 citation statements)

References 14 publications

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“…46 Therefore, it is not difficult to understand that sample A is of weak p type. The derived value of the N O -Zn-Te exactly meets the one reported in a prior article, 13 while the one of the N O -Zn-O closely matches the typical activation energy of the substitutional N O in ZnO. 47 The inset of Fig.…”

Section: Resultssupporting

confidence: 86%

Mutually beneficial doping of tellurium and nitrogen in ZnO films grown by metal-organic chemical vapor deposition

Tang

et al. 2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inResidual and intentional n-type doping of ZnO thin films grown by metal-organic vapor phase epitaxy on sapphire and ZnO substrates Thermal diffusion of nitrogen into ZnO film deposited on InN/sapphire substrate by metal organic chemical vapor deposition Structural and luminescent properties of Er-doped ZnO films grown by metalorganic chemical vapor depositiona)Electrical and optical studies of metal organic chemical vapor deposition grown N-doped ZnO filmsThe advantages of tellurium-nitrogen (Te-N) codoping are investigated in ZnO films grown by metal-organic chemical vapor deposition. Te incorporation gives aid in enhancing the N solubility by lowering its formation energy while N addition helps to stabilize the substituted Te on O sites with the phase-segregated ZnTe crystallites suppressed by forming the N-Zn-Te structures in the N-doped ZnTe x O 1Àx . Carbon related impurities, commonly existing in N-doped ZnO and acting as compensating centers for holes, are fully eliminated by the Te-N codoping. The codoping technique also lowers the energy level of the N O acceptors and leads to realizing N-doped ZnTe x O 1Àx films with holes as major carriers.

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Section: Resultssupporting

confidence: 86%

Mutually beneficial doping of tellurium and nitrogen in ZnO films grown by metal-organic chemical vapor deposition

Tang

et al. 2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…At early 2006, Porter et al 19 had explored the properties of ZnO films codoped with Te and N and suggested a feasible route to realize intrinsic, even p-type ZnO. Since then, Park et al 20 and our research team 21 had successively attempted the Te-N codoping in ZnO, and reported the findings of p-type characters measured on the codoped samples. Some possible mechanisms being responsible for the origin of the free hole carriers had also been proposed.…”

Section: Introductionmentioning

confidence: 99%

Temperature-dependent photoluminescence of ZnO films codoped with tellurium and nitrogen

Tang

et al. 2012

Journal of Applied Physics

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The photoluminescence spectra as well as their temperature dependence of the tellurium and nitrogen (Te-N) codoped ZnO films have been investigated in detail. Explicit evidences of the emissions related to two acceptors [A1: the NO-Zn-Te subunits and A2: the conventional N ions substituting on oxygen sites (NO)] have been found. The acceptor activation energy level of the A1 (∼118–124 meV) is much shallower than that of the A2 (∼224–225 meV) indicating that the A1 should be mainly responsible for the room-temperature p-type nature of the codoped samples. Meanwhile, the acceptor activation energy level of A1 shows a slight decrease (∼6 meV) as the Te atomic concentration increases in the codoped samples implying that the actual form of the A1 may be a mixture of the NO-Zn-nTe (n = 1, 2, 3, 4). More incorporation of the Te ions into N-doped ZnO films not only makes the acceptor energy level shallower but also improves the crystalline quality and results in the efficiently suppressed native donorlike defects. The optical properties accord well with the crystalline and electrical ones indicating that the Te-N codoping technique is a potentially feasible route to get controllable p-type ZnO materials.

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“…A general breakthrough in this direction has not been achieved up to now. For thin ϐilms, recent attempts to get ZnO p-n junctions and LEDs include ZnO codoped with tellurium and nitrogen [145]. In 2005 the group of Masashi Kawasaki presented the ϐirst p-type ZnO:N/i-ZnO/n-ZnO homojunction thin ϐilm LED [146,147].…”

Section: Light-emitting Diodes and Lasersmentioning

confidence: 99%

Fabrication of ZnO Nanostructures

2014

Zinc Oxide Nanostructures

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The current state of optical properties of ZnO-based nanostructures is discussed in terms of optical recombination, of bandgap engineering and of nanoheterostructures such as core-shell quantum wells and quantum dots. Whispering gallery and Fabry-Perot modes are reviewed in the section on cavity effects, together with regular and random lasing in ZnO nanostructures. First results on Raman and infrared spectroscopy of nanostructures are listed. Promising optical device applications of ZnO nanowires include electrically pumped lasing arrays, photodetectors, and second harmonic generation.

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High-Quality p-Type ZnO Films Grown by Co-Doping of N and Te on Zn-Face ZnO Substrates

Cited by 32 publications

References 14 publications

Mutually beneficial doping of tellurium and nitrogen in ZnO films grown by metal-organic chemical vapor deposition

Mutually beneficial doping of tellurium and nitrogen in ZnO films grown by metal-organic chemical vapor deposition

Temperature-dependent photoluminescence of ZnO films codoped with tellurium and nitrogen

Fabrication of ZnO Nanostructures

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