The hydrogenated amorphous carbon films (a-C:H) or DLC (Diamond-Like Carbon) films are well known for exhibiting high electrical resistivity, low dielectric constant, high mechanical hardness, low friction coefficient, low superficial roughness and also for being inert. In this paper, we produced fluorinated DLC films (a-C:F), and studied the effect of adding CF 4 on the above-mentioned properties of DLC films. These films were produced by a reactive RF magnetron sputtering system using a target of pure carbon in stable graphite allotrope. We performed measurements of electrical characteristic curves of capacitance as a function of applied tension (C-V) and current as a function of the applied tension (I-V). We showed the dielectric constant (k) and the resistivity (ρ) as functions of the CF 4 concentration. On films with 65% CF 4, we found that k = 2.7, and on films with 70% CF 4, ρ = 12.3 × 1011 Ω cm. The value of the electrical breakdown field to films with 70% CF 4 is 5.3 × 106 V/cm.
In this work fluorinated Diamond Like Carbon (DLC) films have been grown with
different CF4 concentrations and have been studied by electrical DC measurements in a temperature range from 30 to 300 K. It was found that the samples grown with lower CF4 concentration show a small rectification, with a potential barrier lower than 0.3 V. The bulk conduction shows a trapcontrolled Space Charge Limited Current (SCLC), with characteristic trap energy between 0.08 and 0.13 eV, confirmed by the differential conductivity analysis. The activation energy (ranging from 50 to 140 meV) is also dependent on the sample fluorine concentration, decreasing with the fluorine concentration increase.
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