2020
DOI: 10.1016/j.diamond.2019.107625
|View full text |Cite
|
Sign up to set email alerts
|

Deposition of diamond films on single crystalline silicon carbide substrates

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
11
0

Year Published

2021
2021
2024
2024

Publication Types

Select...
7

Relationship

1
6

Authors

Journals

citations
Cited by 12 publications
(11 citation statements)
references
References 42 publications
0
11
0
Order By: Relevance
“…However, at sufficiently low temperature, the growth rates of the sp 2 and a-C phases appear significantly dominant compared to their etching rates by atomic H. Thus, the growth of NCD/MCD films is not realized. To facilitate easier nucleation during the development of the nanodiamond phase on glass substrates, utilizing CH 4 as the conventional carbon source diluted by H 2 or Ar gas, most of the early studies unavoidably adopted the prenucleation on the substrate surface by diamond powder or using different mechanical seeding procedures, and also by applying a strong negative d.c. substrate bias. …”
Section: Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…However, at sufficiently low temperature, the growth rates of the sp 2 and a-C phases appear significantly dominant compared to their etching rates by atomic H. Thus, the growth of NCD/MCD films is not realized. To facilitate easier nucleation during the development of the nanodiamond phase on glass substrates, utilizing CH 4 as the conventional carbon source diluted by H 2 or Ar gas, most of the early studies unavoidably adopted the prenucleation on the substrate surface by diamond powder or using different mechanical seeding procedures, and also by applying a strong negative d.c. substrate bias. …”
Section: Discussionmentioning
confidence: 99%
“…However, at sufficiently low temperature, the growth rates of the sp 2 and a-C phases appear significantly dominant compared to their etching rates by atomic H. Thus, the growth of NCD/MCD films is not realized. To facilitate easier nucleation during the development of the nanodiamond phase on glass substrates, utilizing CH 4 as the conventional carbon source diluted by H 2 or Ar gas, most of the early studies unavoidably adopted the prenucleation on the substrate surface by diamond powder or using different mechanical seeding procedures, 52 and also by applying a strong negative d.c. substrate bias. 53−55 Using microwave plasma CVD (MWPCVD) in conventional as well as its various modes, e.g., the pulsed mode, the surfacewave mode, linear antennas, and the magnetoactive mode, deposition of different categories of diamond on Si and quartz substrates proceeds at temperatures of ∼100−750 °C via efficiently suppressing the excessive carbon decomposition by virtue of low electron temperature over the CVD plasma.…”
Section: ■ Discussionmentioning
confidence: 99%
“…Plasma treatments have also been used in the past on other surfaces to facilitate electrostatic seeding. [98][99][100][101][102][103] This should not be confused with the combinatorial seeding technique (discussed later) 67,68,104 in which a thin carbon layer is formed on the substrate before electrostatic seeding. The measured z-potential of any surface gives the average over certain area or certain volume of liquid at a given pH.…”
Section: Electrostatic Seedingmentioning
confidence: 99%
“…The small size of the particle can be helpful in the formation of thin diamond films. More recently this process has been used by Mukherjee et al 104 for growing diamond on silicon carbide. Other mixed techniques have been the use of scratching in combination with carbon deposition or other metal deposition.…”
Section: Nucleation Of Diamondmentioning
confidence: 99%
“…In present industrial applications, nanocrystalline diamond (NCD) is used as a mechanically highly stable and reliable material, e.g., in clockworks, as surgery instruments and also MEMS devices. [3][4][5] Deposition of diamond by means of chemical vapor deposition technologies (CVD) on blank or coated silicon wafers is widely used, [3,4,6,7] whereas the low-temperature deposition of diamond films at temperatures <400 °C is challenging. [8][9][10] In previous work, also diamond-based pressure sensors were discussed, using either a diamond diaphragm in rigid diamond [11,12] or thin layers of diamond on glass.…”
Section: Introductionmentioning
confidence: 99%