Nucleation of diamond films on heterogeneous substrates: a review

Mandal, Soumen

doi:10.1039/d1ra00397f

Cited by 68 publications

(28 citation statements)

References 229 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In our synthesis, the Si nanocrystals clearly act as seeds, in parallel to the seeded growth of nanodiamond layers. [46] However, as is evident from Table 3, the Si-originating PL undergoes a blueshift in the initial stages of the MMS treatment. This observation suggests that the seeding Si nanocrystals decrease their size to a small extent.…”

Section: Discussionmentioning

confidence: 82%

Highly spherical SiC nanoparticles grown in nonthermal plasma

Galář

Stuchlı́k

Müller

et al. 2021

Plasma Processes & Polymers

View full text Add to dashboard Cite

show abstract

Section: Discussionmentioning

confidence: 82%

Highly spherical SiC nanoparticles grown in nonthermal plasma

Galář

Stuchlı́k

Müller

et al. 2021

Plasma Processes & Polymers

View full text Add to dashboard Cite

show abstract

“…B-NCD films were grown in a Seki Diamond systems AX 6500 series MPCVD system. High resistivity float-zone Si substrates ( = 2", t = 500 µm) were first seeded using a nanodiamond colloid suspension [28,29] and grown at 3.5 kW at 40 Torr with a pyrometer measured substrate temperature of 755 • C for 3 hours. Deposition was achieved in a gas mixture of CH 4 , trimethylboron (TMB) dilute in H 2 in a total flow rate of 500 sccm (3% CH4 and B/C ratio ∼12,800 ppm) [30].…”

Section: Methodsmentioning

confidence: 99%

Superconducting boron doped nanocrystalline diamond microwave coplanar resonator

Cuenca¹,

Brien²,

Mandal³

et al. 2022

Preprint

Self Cite

View full text Add to dashboard Cite

A superconducting boron doped nanocrystalline diamond (B-NCD) coplanar waveguide resonator (CPR) is presented for kinetic inductance (L k ) and penetration depth (λ L ) measurements at microwave frequencies of 0.4 to 1.2 GHz and at temperatures below 3 K. Using a simplified effective medium CPR approach, this work demonstrates that thin granular B-NCD films (t ≈ 500 nm) on Si have a large penetration depth (λ L ≈ 4.3 to 4.4 µm), and therefore an associated high kinetic inductance (L k, ≈ 670 to 690 pH/ ). These values are much larger than those typically obtained for films on single crystal diamond which is likely due to the significant granularity of the nanocrystalline films. Based on the measured Q factors of the structure, the calculated surface resistance in this frequency range is found to be as low as ≈ 2 to 4 µΩ at T < 2 K, demonstrating the potential for granular B-NCD for high quality factor superconducting microwave resonators and highly sensitive kinetic inductance detectors.

show abstract

“…This is likely due to the holder significantly perturbing the resonant frequency of the chamber. The Si wafers were seeded using the ultrasonic seeding process [55,56]. Briefly, the wafers were solvent cleaned and placed in a nanodiamond colloidal solution with a particles of a positive zeta potential whilst under ultrasonic agitation for 10 minutes.…”

Section: Experimental Methodsmentioning

confidence: 99%

Microwave plasma modelling in clamshell chemical vapour deposition diamond reactors

Cuenca,

Mandal,

Thomas

et al. 2021

Preprint

Self Cite

View full text Add to dashboard Cite

A microwave plasma model of a chemical vapour deposition (CVD) reactor is presented for understanding spatial heteroepitaxial growth of polycrystalline diamond on Si. This work is based on the TM 0(n>1)p clamshell style reactor (Seki Diamond/ASTEX SDS 6K, Carat CTS6U, ARDIS-100 style) whereby a simplified H 2 plasma model is used to show the radial variation in growth rate over small samples with different sample holders. The model uses several steps: an electromagnetic (EM) eigenfrequency solution, a frequency-transient EM/plasma fluid solution and transient a heat transfer solution at low and high microwave power density. Experimental growths provide model validation with characterisation using Raman spectroscopy and scanning electron microscopy. This work demonstrates that shallow holders result in non-uniform diamond films, with a radial variation akin to the electron density and temperature distribution at the wafer surface. For the same process conditions, greater homogeneity is observed for taller holders, however, if the height is too extreme, the diamond quality reduces. From a modelling perspective, EM solutions are limited but useful for examining electric field focusing at the sample edges, resulting in accelerated diamond growth. For better accuracy, plasma fluid and heat transfer solutions are imperative for modelling spatial growth variation.

show abstract

Nucleation of diamond films on heterogeneous substrates: a review

Abstract: Growth of diamond film on heterogeneous substrates assisted by nucleation/seeding.

Cited by 68 publications

References 229 publications

Highly spherical SiC nanoparticles grown in nonthermal plasma

Highly spherical SiC nanoparticles grown in nonthermal plasma

Superconducting boron doped nanocrystalline diamond microwave coplanar resonator

Microwave plasma modelling in clamshell chemical vapour deposition diamond reactors

Contact Info

Product

Resources

About