2021
DOI: 10.1002/ppap.202100127
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Highly spherical SiC nanoparticles grown in nonthermal plasma

Abstract: Silicon carbide (SiC) nanoparticles have excellent properties and varied possible applications. However, the synthesis of this material usually requires high temperatures due to its high melting point (2730°C). In this study, we report on a synthesis of highly spherical SiC nanocrystals (50-150 nm) using nonthermal

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Cited by 6 publications
(3 citation statements)
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“…Commensurate with our recent work on the plasma synthesis of Si NCs from the liquid precursor cyclohexasilane (CHS), 39,40 and with an array of experience related to Si NC photophysics in general, 41−46 we draw here on recent atmospheric-pressure plasma SiC NC synthesis schemes, 17,33 noting that there is a paucity of related work in nonthermal plasmas. 47,48 The growth mechanism that we recently postulated for Si NCs from vapor-phase liquid precursors in low-pressure plasmas is a type of step-growth "polymerization", 40 and we anticipate that a similar pathway applies to SiC NCs. In this contribution, SiC NCs of controlled 2−4 nm size are produced through a nonthermal plasma synthesis scheme using tetramethylsilane (TMS) as a precursor, where reactor pressure, or, equivalently, plasma residence time is demonstrated to be the primary variable for tuning the NC size.…”
Section: ■ Introductionmentioning
confidence: 84%
“…Commensurate with our recent work on the plasma synthesis of Si NCs from the liquid precursor cyclohexasilane (CHS), 39,40 and with an array of experience related to Si NC photophysics in general, 41−46 we draw here on recent atmospheric-pressure plasma SiC NC synthesis schemes, 17,33 noting that there is a paucity of related work in nonthermal plasmas. 47,48 The growth mechanism that we recently postulated for Si NCs from vapor-phase liquid precursors in low-pressure plasmas is a type of step-growth "polymerization", 40 and we anticipate that a similar pathway applies to SiC NCs. In this contribution, SiC NCs of controlled 2−4 nm size are produced through a nonthermal plasma synthesis scheme using tetramethylsilane (TMS) as a precursor, where reactor pressure, or, equivalently, plasma residence time is demonstrated to be the primary variable for tuning the NC size.…”
Section: ■ Introductionmentioning
confidence: 84%
“…SiQDs were synthesized in a noncommercial flow-through glass reactor with low-pressure nonthermal plasma as detailed elsewhere. 40 The output source power was set to 150 W. The PL wavelength of the sample was tuned by changing the composition of the synthesis gas ((i) 80 sccm of silane in Ar with 10 sccm of H 2 , (ii) 80 sccm of silane in Ar with 50 sccm of H 2 , and (iii) 40 sccm of silane, 40 sccm of Ar, and 100 sccm of hydrogen). The estimated residence time of the forming nanoparticles in the plasma was about 15 ms.…”
Section: Sample Fabrication 211 Nonthermal Plasma Synthesis (Ntp-siqds)mentioning
confidence: 99%
“…SiC nanostructures can be synthesized with various methods. For instance, a synthesis of highly spherical cubic (3C) SiC nanocrystals (50–150 nm) using nonthermal plasma has been recently reported where the Si seed remained present in the middle of the SiC nanocrystals [ 3 ]. The vapor-liquid-solid (VLS) is also known technique to grow SiC [ 4 ].…”
Section: Introductionmentioning
confidence: 99%